Single Bipolar Transistors 2SC2655-Y(T6TOJ,FM product image

2SC2655-Y(T6TOJ,FM

  • Description:TRANS NPN 50V 2A TO-92MOD
  • Series:-

SKU:72ed5138679e Category: Brand:

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2SC2655-Y(T6TOJ,FM is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists Toshiba Semiconductor and Storage. Its product description is TRANS NPN 50V 2A TO-92MOD. Review the specifications below when checking this part for your BOM.

Single Bipolar Transistors specifications for 2SC2655-Y(T6TOJ,FM

  • Description:TRANS NPN 50V 2A TO-92MOD
  • Series:-
  • Mfr:Toshiba Semiconductor and Storage
  • Package:Bulk
  • Transistor Type:NPN
  • Current - Collector (Ic) (Max):2:00 AM
  • Voltage - Collector Emitter Breakdown (Max):50 V
  • Vce Saturation (Max) @ Ib, Ic:500mV @ 50mA, 1A
  • Current - Collector Cutoff (Max):1µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce:70 @ 500mA, 2V
  • Power - Max:900 mW
  • Frequency - Transition:100MHz
  • Operating Temperature:150°C (TJ)
  • Mounting Type:Through Hole
  • Package / Case:TO-226-3, TO-92-3 Long Body
  • Supplier Device Package:TO-92MOD
  • Grade:-
  • Qualification:-

Single Bipolar Transistors datasheet and documents for 2SC2655-Y(T6TOJ,FM

2SC2655-Y(T6TOJ,FM

Single Bipolar Transistors Overview

The Toshiba 2SC2655 is an NPN silicon epitaxial transistor utilizing the PCT process, housed in a JEDEC TO-92MOD package. It features a collector-emitter breakdown voltage of 50 V and a continuous collector current rating of 2 A. The device supports a maximum collector power dissipation of 900 mW at 25°C ambient temperature. Electrical characteristics include a low saturation voltage of 0.5 V max at 1 A collector current and a transition frequency of 100 MHz typical. Storage time is typically 1.0 μs.

Single Bipolar Transistors Feature Summary

  • Low saturation voltage for efficient switching performance
  • High-speed switching capability with short storage times
  • Complementary pairing available with the 2SA1020 PNP transistor

Single Bipolar Transistors Applications

  • Power amplifier circuits
  • General power switching applications

Single Bipolar Transistors Procurement Notes

Verify RoHS compatibility status directly with Toshiba sales representatives, as markings indicate specific environmental compliance variations. Confirm the 'Y' suffix corresponds to the required DC current gain classification (hFE) range of 120 to 240. Ensure the ordering suffix matches the desired packaging format before finalizing procurement orders.

Single Bipolar Transistors Selection Notes

Select this component for designs requiring high collector current handling up to 2 A within a standard through-hole package. The complementary 2SA1020 allows for push-pull configurations. Verify thermal derating requirements against the safe operating area curves if operating near the 900 mW limit or elevated temperatures.

Single Bipolar Transistors Part Context

This part belongs to the general electronics transistor category from Toshiba Semiconductor and Storage. It is designed for industrial applications including computers, office equipment, and measuring instruments. The device utilizes an epitaxial structure optimized for power amplification and switching duties.

Single Bipolar Transistors Replacement Considerations

The datasheet explicitly identifies the 2SA1020 as the complementary PNP counterpart. No other direct substitute part numbers are documented in the provided source material.

2SC2655-Y(T6TOJ,FM2SC2655-Y(T6TOJ,FM

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