2SC2655-Y(TE6,F,M)

Single Bipolar Transistors Overview

The Toshiba 2SC2655 is an NPN silicon epitaxial planar transistor utilizing the PCT process, housed in a JEDEC TO-92MOD package. It features a maximum collector current of 2 A and a collector-emitter breakdown voltage of 50 V. The device achieves a low saturation voltage of 0.5 V (max) at 1 A and offers high-speed switching with a typical storage time of 1.0 μs. It provides a collector power dissipation of 900 mW and a transition frequency of 100 MHz. The 'Y' suffix designates a DC current gain range of 120 to 240.

Single Bipolar Transistors Feature Summary

• Low saturation voltage for efficient power handling
• High-speed switching capability suitable for rapid transitions
• Complementary pairing with the 2SA1020 PNP transistor

Single Bipolar Transistors Applications

• Power amplifier circuits
• General power switching applications

Single Bipolar Transistors Procurement Notes

Verify RoHS compatibility status directly with Toshiba sales representatives, as datasheet markings indicate specific lot number requirements for compliance. Confirm the Y suffix ensures the required hFE range of 120 to 240 for your specific circuit design needs before finalizing orders.

Single Bipolar Transistors Selection Notes

Select this component when designing circuits requiring high collector current up to 2 A with low saturation losses. Ensure the thermal management supports the 900 mW dissipation limit. Verify that the 120–240 hFE range aligns with base drive requirements. Consider the complementary 2SA1020 if push-pull configurations are necessary.

Single Bipolar Transistors Part Context

This NPN transistor belongs to Toshiba's general-purpose discrete semiconductor lineup designed for robust performance in consumer and industrial electronics. It serves as a standard solution for medium-power amplification and switching tasks where low saturation voltage and fast response times are critical design parameters.

Single Bipolar Transistors Replacement Considerations

The 2SA1020 is the designated complementary PNP counterpart. For direct replacements, verify equivalent TO-92 packages, 50V ratings, and comparable hFE ranges from other manufacturers.

Single Bipolar Transistors FAQ

What is the DC current gain range for the 2SC2655-Y variant?

The Y suffix indicates a minimum DC current gain (hFE) of 120 and a maximum of 240 when tested at IC = 0.5 A and VCE = 2 V.

Is the 2SC2655 intended for automotive or aerospace use?

No. The datasheet explicitly restricts use in equipment requiring extraordinarily high reliability, including automobiles, trains, ships, and aerospace applications.

What is the maximum junction temperature rating?

The absolute maximum junction temperature (Tj) is rated at 150 °C.