2SC2712-OTE85LF

Single Bipolar Transistors Overview

The Toshiba Semiconductor and Storage 2SC2712-OTE85LF is a single NPN bipolar junction transistor (BJT) designed for surface-mount applications. It features a collector-emitter breakdown voltage of 50 V and a maximum continuous collector current of 150 mA. The device operates with a transition frequency of 80 MHz and dissipates up to 150 mW of power. Key electrical characteristics include a DC current gain (hFE) of at least 120 when measured at 2 mA and 6 V, and a collector-emitter saturation voltage of no more than 250 mV under specific drive conditions. The component is housed in an S-Mini package, equivalent to TO-236-3 or SC-59, and supports a maximum junction temperature of 125°C.

Single Bipolar Transistors Feature Summary

• NPN configuration optimized for low-voltage switching and amplification tasks
• Compact S-Mini surface-mount footprint suitable for space-constrained designs
• High current gain performance ensuring efficient base drive requirements

Single Bipolar Transistors Applications

• General-purpose signal amplification circuits
• Low-power switching applications in consumer electronics
• Driver stages for small-signal processing systems

Single Bipolar Transistors Procurement Notes

Verify the exact suffix against the manufacturer's official documentation to confirm pinout compatibility and electrical tolerances. Ensure the ordering code matches the specific tape-and-reel or cut-tape format required for your assembly line equipment. Confirm RoHS compliance status directly with the supplier to meet environmental regulations for your target market.

Single Bipolar Transistors Selection Notes

Select this component when a compact NPN transistor with moderate voltage handling and reliable gain is required. Compare the 80 MHz transition frequency against circuit speed needs. Evaluate the 150 mA current limit against peak load demands. Consider the S-Mini package dimensions during PCB layout planning to ensure adequate thermal clearance and soldering space.

Single Bipolar Transistors Part Context

This part belongs to Toshiba's lineup of small-signal bipolar transistors intended for general electronic equipment. It serves as a standard replacement for legacy through-hole devices in modern surface-mount assemblies. The S-Mini package allows for automated placement, supporting high-volume manufacturing processes common in contemporary consumer and industrial hardware production lines.

Single Bipolar Transistors Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided source material.