Single Bipolar Transistors 2SC2712GT1G product image

2SC2712GT1G

$0.03
  • Description:TRANS NPN 50V 0.15A SC-59
  • Series:-

SKU:f03be1e29d39 Category: Brand:

  
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2SC2712GT1G is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists onsemi. Its product description is TRANS NPN 50V 0.15A SC-59. Review the specifications below when checking this part for your BOM.

Single Bipolar Transistors specifications for 2SC2712GT1G

  • Description:TRANS NPN 50V 0.15A SC-59
  • Series:-
  • Mfr:onsemi
  • Package:Bulk
  • Transistor Type:NPN
  • Current - Collector (Ic) (Max):150 mA
  • Voltage - Collector Emitter Breakdown (Max):50 V
  • Vce Saturation (Max) @ Ib, Ic:250mV @ 10mA, 100mA
  • Current - Collector Cutoff (Max):100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce:200 @ 2mA, 6V
  • Power - Max:200 mW
  • Frequency - Transition:80MHz
  • Operating Temperature:150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package:SC-59
  • Grade:-
  • Qualification:-

Single Bipolar Transistors datasheet and documents for 2SC2712GT1G

2SC2712GT1G

Single Bipolar Transistors Overview

The 2SC2712GT1G is a single NPN bipolar junction transistor manufactured by onsemi. It is housed in a surface-mount SC-59 (TO-236-3) package. The device is rated for a maximum collector-emitter voltage of 50 V and a continuous collector current of 150 mA. It features a transition frequency of 80 MHz, suitable for medium-frequency amplification tasks. The component dissipates up to 200 mW of power under standard operating conditions.

Single Bipolar Transistors Feature Summary

  • NPN configuration designed for discrete semiconductor applications
  • Surface mount construction in compact SC-59 package
  • Optimized for medium-frequency signal amplification

Single Bipolar Transistors Applications

  • Medium frequency amplifier circuits
  • Discrete switching applications
  • General-purpose electronic signal processing

Single Bipolar Transistors Procurement Notes

Verify the specific manufacturer marking and datasheet revision against official onsemi documentation before integration. Ensure the SC-59 footprint matches the design layout. Confirm that the 50V rating and 150mA current limits meet the circuit requirements without derating issues.

Single Bipolar Transistors Selection Notes

Select this component when a small-form-factor NPN transistor is required for low-to-medium frequency operations. The SC-59 package offers space efficiency for surface-mount designs. Consider the 80MHz transition frequency limit for high-speed applications where faster alternatives may be necessary.

Single Bipolar Transistors Part Context

This part belongs to onsemi's portfolio of low-to-medium voltage power MOSFETs and bipolar transistors. It serves as a discrete semiconductor solution for switching and amplification. The product line emphasizes reliability and performance for general-purpose electronic applications requiring compact packaging.

Single Bipolar Transistors Replacement Considerations

Direct substitutes include other NPN transistors in SOT-23/SC-59 packages with comparable 50V ratings and similar current capabilities. Verify pinout compatibility and thermal characteristics when cross-referencing with equivalent components from other manufacturers.

Single Bipolar Transistors FAQ

What is the maximum collector current for the 2SC2712GT1G?

The maximum continuous collector current is 150 mA.

Is this transistor suitable for high-frequency RF applications?

No, it is designed for medium-frequency applications with an 80 MHz transition frequency.

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