Single Bipolar Transistors 2SC2713-GR,LF product image

2SC2713-GR,LF

$0.20
  • Description:TRANS NPN 120V 0.1A TO-236
  • Series:-

SKU:0f1c07847539 Category: Brand:

  
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2SC2713-GR,LF is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists Toshiba Semiconductor and Storage. Its product description is TRANS NPN 120V 0.1A TO-236. Review the specifications below when checking this part for your BOM.

Single Bipolar Transistors specifications for 2SC2713-GR,LF

  • Description:TRANS NPN 120V 0.1A TO-236
  • Series:-
  • Mfr:Toshiba Semiconductor and Storage
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Transistor Type:NPN
  • Current - Collector (Ic) (Max):100 mA
  • Voltage - Collector Emitter Breakdown (Max):120 V
  • Vce Saturation (Max) @ Ib, Ic:300mV @ 1mA, 10mA
  • Current - Collector Cutoff (Max):100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce:200 @ 2mA, 6V
  • Power - Max:150 mW
  • Frequency - Transition:100MHz
  • Operating Temperature:125°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package:TO-236
  • Grade:-
  • Qualification:-

Single Bipolar Transistors datasheet and documents for 2SC2713-GR,LF

2SC2713-GR,LF

Single Bipolar Transistors Overview

The 2SC2713-GR,LF is an NPN bipolar junction transistor manufactured by Toshiba Semiconductor and Storage. It features a collector-emitter voltage of 120 V and a continuous collector current rating of 150 mA. The device offers a high DC current gain (hFE) ranging from 200 to 700 at a collector current of 2 mA. Its transition frequency is specified at 80 MHz, supporting audio frequency applications. The component operates within a junction temperature range up to 125 °C and dissipates a maximum power of 150 mW. It utilizes the S-Mini surface-mount package.

Single Bipolar Transistors Feature Summary

  • High breakdown voltage capability for robust circuit operation
  • Wide current gain range suitable for linear amplification
  • Low noise performance optimized for audio signal processing

Single Bipolar Transistors Applications

  • Audio frequency general purpose amplifier circuits
  • Low-noise pre-amplifier stages
  • General-purpose switching applications requiring high voltage tolerance

Single Bipolar Transistors Procurement Notes

Verify the specific suffix against official Toshiba documentation to confirm pinout compatibility and electrical tolerances. Ensure the procurement channel provides valid RoHS compliance certificates. Cross-reference the manufacturer part number with authorized distributor databases to validate authenticity before finalizing orders.

Single Bipolar Transistors Selection Notes

Select this component when designing circuits that require high voltage handling combined with low noise characteristics. The wide hFE range allows flexibility in biasing networks for analog signal paths. Verify that the thermal management strategy accommodates the 150 mW power dissipation limit in the intended operating environment.

Single Bipolar Transistors Part Context

This transistor belongs to the 2SC2713 series designed primarily for audio frequency applications. It serves as a complementary device to the 2SA1163 PNP transistor. The series is engineered to provide excellent linearity and low noise figures, making it distinct from standard general-purpose switching transistors.

Single Bipolar Transistors Replacement Considerations

Official datasheets identify the 2SA1163 as the complementary PNP counterpart. Designers should verify pinout compatibility and electrical parameters when sourcing substitutes from other manufacturers.

2SC2713-GR,LF2SC2713-GR,LF
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