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2SC2713-GR,LF is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists Toshiba Semiconductor and Storage. Its product description is TRANS NPN 120V 0.1A TO-236. Review the specifications below when checking this part for your BOM.
The 2SC2713-GR,LF is an NPN bipolar junction transistor manufactured by Toshiba Semiconductor and Storage. It features a collector-emitter voltage of 120 V and a continuous collector current rating of 150 mA. The device offers a high DC current gain (hFE) ranging from 200 to 700 at a collector current of 2 mA. Its transition frequency is specified at 80 MHz, supporting audio frequency applications. The component operates within a junction temperature range up to 125 °C and dissipates a maximum power of 150 mW. It utilizes the S-Mini surface-mount package.
Verify the specific suffix against official Toshiba documentation to confirm pinout compatibility and electrical tolerances. Ensure the procurement channel provides valid RoHS compliance certificates. Cross-reference the manufacturer part number with authorized distributor databases to validate authenticity before finalizing orders.
Select this component when designing circuits that require high voltage handling combined with low noise characteristics. The wide hFE range allows flexibility in biasing networks for analog signal paths. Verify that the thermal management strategy accommodates the 150 mW power dissipation limit in the intended operating environment.
This transistor belongs to the 2SC2713 series designed primarily for audio frequency applications. It serves as a complementary device to the 2SA1163 PNP transistor. The series is engineered to provide excellent linearity and low noise figures, making it distinct from standard general-purpose switching transistors.
Official datasheets identify the 2SA1163 as the complementary PNP counterpart. Designers should verify pinout compatibility and electrical parameters when sourcing substitutes from other manufacturers.
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