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The 2SC2714-Y(TE85L,F) is a silicon NPN epitaxial planar transistor manufactured by Toshiba Semiconductor and Storage. It is designed for general-purpose amplification applications, offering high DC current gain and low noise characteristics. The device features a collector-emitter breakdown voltage of 50V and a maximum collector current of 150mA. It operates within a junction temperature range of -55°C to +150°C and dissipates up to 250mW of power. The component is housed in the S-Mini (TO-236-3) surface-mount package.
Verify the manufacturer part number against official Toshiba Semiconductor and Storage documentation to ensure authenticity. Confirm that the ordering suffix matches the required tape-and-reel packaging format. Check RoHS compliance status as specified in the latest datasheet revision. Ensure storage conditions adhere to the recommended temperature and humidity limits to maintain device integrity prior to assembly.
Select this component when a small-signal NPN transistor with high gain and low noise is required for audio or general amplification tasks. Consider the complementary 2SA1162 for push-pull configurations. Verify that the S-Mini package fits the PCB layout constraints. Ensure the operating voltage does not exceed the 50V collector-emitter rating under all transient conditions.
This transistor belongs to the 2SC2712 series family, sharing similar electrical characteristics and physical dimensions. It is often used in conjunction with other Toshiba small-signal transistors for balanced circuit designs. The S-Mini package allows for compact board layouts in consumer electronics and portable devices requiring efficient space utilization.
The 2SA1162 serves as the complementary PNP counterpart. Direct substitutes may include other NPN transistors with comparable 50V ratings and 150mA current capabilities, provided pinouts and package types match.