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The 2SC2735JTL-E is an NPN silicon small signal transistor manufactured by Renesas Electronics. It is housed in a compact SOT-323 surface-mount package designed for low-power applications. The device features a maximum collector-emitter voltage of 50V and a continuous collector current rating of 100mA. Key electrical characteristics include a minimum DC current gain (hFE) of 100 at a collector current of 10mA, ensuring reliable amplification performance. The component operates within a temperature range from -55°C to +150°C and has a maximum power dissipation of 200mW, making it suitable for general-purpose switching and amplification tasks in portable electronics.
Verify the specific suffix JTL-E against official Renesas documentation to confirm pinout configuration and tape-and-reel specifications. Ensure compliance with RoHS directives if required by your manufacturing standards. Cross-reference the manufacturer part number with authorized distributors to validate authenticity and traceability before procurement.
Select this component when a compact NPN transistor with moderate voltage ratings and low power consumption is required. Compare hFE ranges and transition frequency specifications against circuit requirements. Consider the SOT-323 footprint constraints and thermal management capabilities during PCB layout design to ensure optimal performance under load conditions.
This transistor belongs to Renesas' portfolio of discrete semiconductor devices, often originating from legacy NEC Electronics product lines following corporate mergers. It serves as a standard solution for basic analog and digital switching functions where size and cost efficiency are prioritized over high-power handling capabilities.
Publicly confirmed substitute part numbers for the 2SC2735JTL-E were not identified in available verified sources. Engineers should consult official Renesas documentation or authorized distributor databases for equivalent components with matching electrical parameters and package dimensions.