2SC2735JTR-E

Overview

The 2SC2735JTR-E is a small signal NPN bipolar junction transistor designed for high-frequency amplifier applications. It features a maximum collector-emitter voltage of 20V and a continuous collector current rating of 50mA. The device operates with a transition frequency up to 1.2GHz and dissipates 150mW of power. Packaged in a surface-mount 3-MPAK (SOT-23) format, it supports efficient integration into compact RF circuits requiring reliable high-speed switching and amplification capabilities.

Feature Summary

• Optimized for high-frequency signal amplification tasks
• NPN configuration suitable for small-signal processing
• Surface-mount packaging for automated assembly

Applications

• High-frequency amplifier circuits
• RF signal processing modules
• Small-signal switching applications

Procurement Notes

Verify the exact suffix designation when ordering, as availability may vary by region. Confirm that the supplier provides official Renesas documentation to ensure component authenticity. Check for specific customer adoption requirements if applicable to your supply chain. Ensure the receiving facility handles ESD-sensitive components according to standard semiconductor handling protocols during storage and installation.

Selection Notes

Select this component when a low-voltage, high-speed NPN transistor is required for RF stages. The 1.2GHz transition frequency makes it suitable for applications beyond standard audio or low-frequency ranges. Consider the 3-MPAK package size for board space constraints. Validate thermal management needs against the 150mW dissipation limit in the final enclosure design.

Part Context

This part belongs to Renesas' portfolio of small signal bipolar transistors. It serves as a discrete active element within larger electronic systems. The JTR-E suffix typically indicates tape-and-reel packaging for high-volume manufacturing. It complements other RF components in communication and signal conditioning hardware.

Replacement Considerations

Consult official cross-reference guides for compatible substitutes. Verify pinout compatibility and electrical parameters such as Vceo and fT before substitution. Ensure the alternative device meets the same thermal and mechanical specifications for direct replacement.