2SC2812-6-M-TB-E

Single Bipolar Transistors Overview

The onsemi 2SC2812-6-M-TB-E is a silicon NPN bipolar junction transistor designed for high-frequency amplifier applications. It features a surface-mount PCP package and supports a maximum collector-emitter voltage of 10 V with a continuous collector current of 70 mA. The device operates up to a frequency of 7 GHz, offering a minimum DC current gain (hFE) of 60 at 20 mA and 5 V. It dissipates up to 200 mW of power and functions within a temperature range of -55°C to +150°C.

Single Bipolar Transistors Feature Summary

• Optimized for high-frequency signal amplification in RF circuits
• Compact surface-mount packaging facilitates dense board layouts
• High transition frequency capability for wideband operation

Single Bipolar Transistors Applications

• RF low-noise amplifier stages
• High-frequency general-purpose amplification
• Wireless communication transceiver front-ends

Single Bipolar Transistors Procurement Notes

Verify component authenticity through authorized distribution channels. Confirm the specific suffix matches the required electrical characteristics. Check for end-of-life status or discontinuation notices prior to final design approval. Ensure storage conditions comply with moisture sensitivity level requirements for surface-mount devices.

Single Bipolar Transistors Selection Notes

Select this component when a small-signal NPN transistor with high-speed switching and amplification capabilities is required. Compare transition frequency and noise figure against alternative RF transistors. Ensure the operating voltage and current limits align with the circuit design specifications. Consider thermal management requirements given the low power dissipation rating.

Single Bipolar Transistors Part Context

This part belongs to the family of silicon NPN RF bipolar transistors manufactured by onsemi. These components are engineered for compactness and performance in portable electronic devices. The series typically targets applications requiring high gain and low noise at microwave frequencies.

Single Bipolar Transistors Replacement Considerations

Consult official substitution guides for verified equivalents. Cross-reference pinouts and electrical parameters carefully. Verify that any substitute meets the same RF performance and package constraints.