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The onsemi 2SC2814-5-TB-E is an NPN silicon RF bipolar transistor designed for high-frequency applications. It features a maximum collector-emitter voltage (VCEO) of 3 V and a maximum DC collector current (IC) of 100 mA. The device operates with a transition frequency (fT) of 16 GHz at a collector current of 10 mA and a collector-emitter voltage of 2 V. Packaged in the SC-70 (SOT-323) surface-mount format, it offers low noise figure characteristics suitable for RF front-end modules.
Verify the specific suffix -5-TB-E against the manufacturer datasheet to confirm binning or electrical parameter variations. Ensure the SC-70 package dimensions match the target PCB layout constraints. Confirm RoHS compliance status through official documentation prior to integration into regulated products.
Select this component when a 3 V supply voltage and 100 mA current limit are required for RF stages. Compare noise figure specifications against alternative SOT-323 devices for optimal signal-to-noise ratio. Validate thermal dissipation capabilities within the small package for continuous wave operation.
This part belongs to the 2SC2814 series of NPN RF transistors manufactured by onsemi. The series targets high-frequency analog applications requiring compact packaging. The -5-TB-E designation indicates specific testing bins and tape-and-reel packaging configuration.
Consult distributor cross-reference lists for pin-compatible alternatives in the SC-70 package. Verify that substitute parts meet the 16 GHz fT requirement and 3 V VCEO rating. Check for equivalent noise figure specifications to maintain system performance.