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2SC2839E-SPA-AC-SY is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists Sanyo. Its product description is NPN EPITAXIAL PLANAR SILICON. Review the specifications below when checking this part for your BOM.
The 2SC2839E-SPA-AC-SY is an NPN epitaxial planar silicon bipolar junction transistor manufactured by Sanyo. Designed for high-frequency amplifier applications, this component features a typical transition frequency (fT) of 320 MHz and a typical collector-to-emitter capacitance (Cre) of 0.95 pF. The device is supplied in a bulk package configuration. It serves as a specialized semiconductor solution for circuits requiring efficient signal amplification at radio frequencies.
Verify the specific manufacturer designation against official Sanyo Semicon Device documentation to ensure authenticity. Confirm that the bulk packaging format aligns with your assembly requirements. Cross-reference the full part number including suffixes to guarantee compatibility with your circuit design specifications before finalizing procurement decisions.
Select this component when designing circuits that require high-speed switching or amplification at frequencies around 320 MHz. The low capacitance characteristic makes it suitable for sensitive RF stages. Ensure thermal management strategies account for the absolute maximum ratings defined in the official datasheet to maintain reliable operation under load conditions.
This transistor belongs to the single bipolar transistor category within Sanyo's semiconductor portfolio. It is engineered specifically for HF amp applications, distinguishing it from general-purpose switching transistors. The product line emphasizes performance metrics critical for maintaining signal integrity in high-frequency electronic systems.
Consult official Sanyo substitution guides for verified equivalent part numbers. Generic replacements may not match the specific fT or Cre characteristics required for precise high-frequency performance.
It is primarily designed for high-frequency amplifier applications.
It utilizes an NPN epitaxial planar silicon structure.
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