2SC2859-O(TE85L,F)

Single Bipolar Transistors Overview

The 2SC2859-O(TE85L,F) is an NPN bipolar junction transistor manufactured by Toshiba Semiconductor and Storage. It utilizes silicon technology and is housed in a surface-mount S-Mini package, equivalent to TO-236-3 or SC-59. The device supports a maximum collector-emitter voltage of 30 V and a continuous collector current of 0.5 A. Key electrical characteristics include a collector-base voltage of 60 V, an emitter-base voltage of 5 V, and a maximum power dissipation of 150 mW. The component is rated for operation up to a junction temperature of 125°C.

Single Bipolar Transistors Feature Summary

• NPN configuration designed for general-purpose switching applications
• Silicon-based construction ensuring stable thermal performance
• Compact surface-mount packaging suitable for automated assembly

Single Bipolar Transistors Applications

• General-purpose signal switching circuits
• Low-power amplifier stages
• Digital logic interface drivers

Single Bipolar Transistors Procurement Notes

This specific part number is officially listed as obsolete and is no longer manufactured by the supplier. Procurement efforts should focus on verifying availability through authorized distributors for remaining stock or identifying approved replacement components. Direct ordering may not be possible due to discontinuation status. Verify end-of-life documentation before integrating this component into new designs.

Single Bipolar Transistors Selection Notes

Engineers selecting this component must account for its discontinued status. Design reviews should prioritize alternative transistors with compatible pinouts and electrical ratings to ensure long-term supply chain stability. If existing inventory is utilized, verify that the S-Mini package dimensions match the target PCB footprint. Consider thermal constraints associated with the 150 mW power dissipation limit in high-density layouts.

Single Bipolar Transistors Part Context

The 2SC2859 series represents a line of small-signal NPN transistors from Toshiba. The -O suffix typically denotes specific binning or packaging variations within the manufacturer's portfolio. This component belongs to the broader category of discrete semiconductor devices used for amplification and switching. The S-Mini package provides a compact form factor compared to traditional through-hole alternatives.

Single Bipolar Transistors Replacement Considerations

Public confirmed substitute part numbers include 2SD2657KT146 from Rohm Semiconductor. Users should verify that any replacement matches the original NPN polarity, voltage ratings, and package type to maintain circuit functionality.