2SC2873-Y(TE12L,ZC

$0.56

Description：TRANS NPN 50V 2A PW-MINI
Series：-

SKU:a835972a3a1f Category: Single Bipolar Transistors Brand: Toshiba Semiconductor and Storage

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Product introduction

2SC2873-Y(TE12L,ZC is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists Toshiba Semiconductor and Storage. Its product description is TRANS NPN 50V 2A PW-MINI. Review the specifications below when checking this part for your BOM.

Single Bipolar Transistors specifications for 2SC2873-Y(TE12L,ZC

Description：TRANS NPN 50V 2A PW-MINI
Series：-
Mfr：Toshiba Semiconductor and Storage
Package：Tape & Reel (TR),Cut Tape (CT)
Transistor Type：NPN
Current - Collector (Ic) (Max)：2:00 AM
Voltage - Collector Emitter Breakdown (Max)：50 V
Vce Saturation (Max) @ Ib, Ic：500mV @ 50mA, 1A
Current - Collector Cutoff (Max)：100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce：70 @ 500mA, 2V
Power - Max：500 mW
Frequency - Transition：120MHz
Operating Temperature：150°C (TJ)
Mounting Type：Surface Mount
Package / Case：TO-243AA
Supplier Device Package：PW-MINI
Grade：-
Qualification：-

Single Bipolar Transistors datasheet and documents for 2SC2873-Y(TE12L,ZC

2SC2873-Y(TE12L,ZC

Single Bipolar Transistors Overview

The Toshiba 2SC2873 is a silicon NPN epitaxial planar transistor utilizing the PCT process. It features a maximum collector current of 2 A and a collector-emitter breakdown voltage of 50 V. The device achieves a low saturation voltage of 0.5 V at 1 A and a typical transition frequency of 120 MHz. Power dissipation reaches 500 mW on standard substrates, extending to 2.0 W when mounted on ceramic. It operates within a junction temperature range up to 150 °C.

Single Bipolar Transistors Feature Summary

Low saturation voltage for efficient power switching
High-speed switching capability with short storage time
Small flat package suitable for surface mounting

Single Bipolar Transistors Applications

Power amplifier circuits
General-purpose power switching applications

Single Bipolar Transistors Procurement Notes

Verify RoHS compatibility status through official Toshiba channels or authorized distributors, as markings indicate specific environmental compliance levels. Confirm the hFE classification suffix matches design requirements, as gain ranges vary between O and Y grades. Ensure absolute maximum ratings are respected during operation to maintain long-term reliability.

Single Bipolar Transistors Selection Notes

Select this component for designs requiring high current handling and fast switching speeds in compact form factors. Consider thermal management carefully, as power dissipation capabilities depend heavily on substrate material and heat sinking. Verify that the complementary 2SA1213 meets system requirements if push-pull configurations are utilized.

Single Bipolar Transistors Part Context

This device belongs to Toshiba's general-purpose small signal transistor lineup manufactured using the PCT (Planar Chip Transistor) process. It is designed for robust performance in consumer electronics and industrial control systems where reliable switching and amplification are required within standard operating temperatures.

Single Bipolar Transistors Replacement Considerations

The datasheet explicitly identifies the 2SA1213 as the complementary PNP counterpart. No other direct substitute part numbers are documented in the provided source material.