2SC2881-Y-TP

Single Bipolar Transistors Overview

The MCC 2SC2881-Y-TP is an NPN silicon power transistor housed in a SOT-89 package. It features a collector-emitter voltage (VCEO) of 120 V and a continuous collector current (IC) of 800 mA. The device has a collector power dissipation (PC) of 500 mW at 25°C, rising to 1000 mW on a ceramic substrate. DC current gain (hFE) ranges from 120 to 240 for the Y rank. Transition frequency (fT) is 120 MHz, with a junction-to-ambient thermal resistance of 250°C/W.

Single Bipolar Transistors Feature Summary

• Designed for power amplifier applications
• Halogen-free green device compliant with UL 94 V-0 flammability rating
• Lead-free finish and RoHS compliant

Single Bipolar Transistors Applications

• Power amplifier circuits

Single Bipolar Transistors Procurement Notes

Verify the specific hFE bin (Y rank: 120-240) against design requirements. Confirm the suffix -TP indicates tape and reel packaging containing 1000 pieces per reel. Ensure sourcing is through authorized distributors to guarantee traceability and compliance with MCC quality standards.

Single Bipolar Transistors Selection Notes

Select this component for high-voltage NPN switching or amplification tasks requiring moderate current handling. The 120 V breakdown voltage suits isolated or high-side driver stages. Evaluate thermal management carefully due to the 250°C/W junction-to-ambient resistance in standard surface-mount configurations.

Single Bipolar Transistors Part Context

This part belongs to the 2SC2881 series of NPN silicon power transistors manufactured by Micro Commercial Components. The series includes variants distinguished by hFE ranking (O and Y ranks). The device utilizes a SOT-89 surface-mount package suitable for compact board layouts.

Single Bipolar Transistors Replacement Considerations

Public confirmed substitute part numbers are not available in the provided documentation.

Single Bipolar Transistors FAQ

What is the DC current gain range for the 2SC2881-Y variant?

The DC current gain (hFE) for the Y rank ranges from 120 to 240 when measured at VCE=5V and IC=100mA.

How does mounting affect the power dissipation rating?

The collector power dissipation increases from 500 mW at 25°C ambient to 1000 mW when mounted on a ceramic substrate measuring 250mm² x 0.8t thickness.

What is the transition frequency of this transistor?

The transition frequency (fT) is specified as 120 MHz under conditions of VCE=5V and IC=100mA.