Single Bipolar Transistors 2SC3074-Y(Q) product image

2SC3074-Y(Q)

$0.37
  • Description:TRANS NPN 50V 5A PW-MOLD
  • Series:-

SKU:6c7aab3b049e Category: Brand:

  
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2SC3074-Y(Q) is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists Toshiba Semiconductor and Storage. Its product description is TRANS NPN 50V 5A PW-MOLD. Review the specifications below when checking this part for your BOM.

Single Bipolar Transistors specifications for 2SC3074-Y(Q)

  • Description:TRANS NPN 50V 5A PW-MOLD
  • Series:-
  • Mfr:Toshiba Semiconductor and Storage
  • Package:Tube
  • Transistor Type:NPN
  • Current - Collector (Ic) (Max):5:00 AM
  • Voltage - Collector Emitter Breakdown (Max):50 V
  • Vce Saturation (Max) @ Ib, Ic:400mV @ 150mA, 3A
  • Current - Collector Cutoff (Max):1µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce:120 @ 1A, 1V
  • Power - Max:1 W
  • Frequency - Transition:120MHz
  • Operating Temperature:150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:TO-251-3 Short Leads, IPAK, TO-251AA
  • Supplier Device Package:PW-MOLD
  • Grade:-
  • Qualification:-

Single Bipolar Transistors datasheet and documents for 2SC3074-Y(Q)

2SC3074-Y(Q)

Single Bipolar Transistors Overview

The Toshiba 2SC3074-Y(Q) is a silicon NPN epitaxial planar transistor utilizing the PCT process, designed for high current switching applications. It features a low collector saturation voltage of 0.4 V maximum at 3 A and a typical storage time of 1.0 μs. The device supports a continuous collector current of 5 A and a collector-emitter voltage of 50 V. The 'Y' suffix indicates a DC current gain (hFE) classification of 120 to 240 at IC = 1 A. It is packaged in a TO-220AB style case.

Single Bipolar Transistors Feature Summary

  • Low collector saturation voltage for efficient power handling
  • High speed switching capability with short storage time
  • Complementary pairing available with the 2SA1244 PNP transistor

Single Bipolar Transistors Applications

  • General electronics applications including computers and office equipment
  • Industrial robots and measuring equipment
  • Home electronics appliances

Single Bipolar Transistors Procurement Notes

Verify the specific ordering suffix against official Toshiba Semiconductor documentation to confirm environmental compliance status, such as RoHS compatibility. Confirm that the 'Y' suffix matches the required hFE binning range for your circuit design. Review the latest reliability handbook for derating guidelines under heavy load conditions.

Single Bipolar Transistors Selection Notes

Select this component when designing circuits requiring high current switching with minimal saturation loss. Ensure the thermal management strategy accounts for the specified junction temperature limits. Verify that the complementary 2SA1244 is suitable if a push-pull configuration is intended. Check absolute maximum ratings against peak operational transients.

Single Bipolar Transistors Part Context

This device belongs to Toshiba's lineup of silicon NPN epitaxial transistors engineered for robust performance in switching environments. It utilizes the PCT process to achieve optimized electrical characteristics. The product line serves general electronic markets, excluding automotive or medical applications unless explicitly permitted by specific manufacturer agreements.

Single Bipolar Transistors Replacement Considerations

The datasheet identifies the 2SA1244 as the complementary PNP transistor. No other direct substitute part numbers are documented in the provided source material.

2SC3074-Y(Q)2SC3074-Y(Q)
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