2SC3117S

Single Bipolar Transistors Overview

The onsemi 2SC3117S is a silicon NPN power transistor housed in a TO-126 package. It features a collector-emitter breakdown voltage of 160 V and supports a continuous collector current of 1.5 A. The device exhibits a transition frequency of 180 MHz and a DC current gain ranging from 100 to 560. Designed for switching applications, it operates within a temperature range of -55°C to +150°C with a maximum power dissipation of 10 W.

Single Bipolar Transistors Feature Summary

• High breakdown voltage capability suitable for demanding switching environments
• Large current capacity supporting up to 1.5 A continuous operation
• Complementary design pairing with the 2SA1249 PNP transistor

Single Bipolar Transistors Applications

• Color TV sound output circuits
• DC-DC converters
• Inverter applications

Single Bipolar Transistors Procurement Notes

Verify the specific suffix 'S' against official datasheets to confirm package variations or tape-and-reel configurations. Ensure compatibility with thermal management requirements for TO-126 mounting. Cross-reference part numbers with authorized distributors to avoid counterfeit components.

Single Bipolar Transistors Selection Notes

Select this component for general-purpose switching tasks requiring moderate voltage handling and current drive. Consider the complementary 2SA1249 for push-pull configurations. Evaluate thermal resistance characteristics for high-power dissipation scenarios.

Single Bipolar Transistors Part Context

This transistor belongs to the family of silicon NPN power transistors designed for robust performance in consumer electronics and industrial switching applications. It serves as a complement to the 2SA1249 PNP counterpart, enabling efficient complementary symmetry circuits.

Single Bipolar Transistors Replacement Considerations

Direct substitutes include the 2SC3117-LT and generic equivalents matching the TO-126 package and electrical specifications.