2SC3135S-SPA

Single Bipolar Transistors Overview

The 2SC3135S-SPA is a small signal NPN silicon bipolar junction transistor manufactured by onsemi. It features a maximum collector current of 0.2 A and a collector-emitter breakdown voltage of 50 V. The device utilizes the SPA (Small Package Advanced) technology, housed in a compact R-PSIP-T3 package with three through-hole terminals. It has a minimum DC current gain of 100 and supports an operating temperature up to 150 °C.

Single Bipolar Transistors Feature Summary

• Utilizes SPA technology for high-density mounting
• Designed for amplifier applications
• NPN silicon construction

Single Bipolar Transistors Applications

• Amplifier circuits

Single Bipolar Transistors Procurement Notes

Verify the specific manufacturer designation, as the provided data references SANYO. Confirm the exact package type and pinout configuration against the official datasheet before integration. Ensure the component meets all required electrical ratings for the target circuit environment.

Single Bipolar Transistors Selection Notes

Select this component for low-power amplification tasks requiring a compact footprint. The 50 V rating suits general-purpose signal processing. Verify thermal management requirements given the 0.25 W power dissipation limit in the specified package.

Single Bipolar Transistors Part Context

This part belongs to the family of small signal bipolar transistors designed for efficient space utilization. The SPA packaging allows for automated assembly in dense PCB layouts. It serves as a discrete solution for analog signal conditioning where size constraints are critical.

Single Bipolar Transistors Replacement Considerations

Cross-reference with other NPN transistors offering similar 0.2 A current and 50 V voltage ratings in a 3-pin inline package. Verify compatibility with existing board footprints and thermal characteristics.