2SC3143-4-TB-E-SY

Single Bipolar Transistors Overview

The Sanyo 2SC3143-4-TB-E-SY is a single NPN bipolar junction transistor designed for surface-mount applications. It features a high collector-emitter breakdown voltage of 160 V and a maximum collector current of 80 mA. The device offers a transition frequency of 150 MHz and a power dissipation rating of 200 mW. It is housed in a 3-terminal CP package, suitable for compact circuit designs requiring high-voltage switching capabilities.

Single Bipolar Transistors Feature Summary

• High breakdown voltage capability exceeding 160 V
• Small output capacitance for signal integrity
• Surface-mount construction for automated assembly

Single Bipolar Transistors Applications

• High-speed data handling circuits
• FPGA interface protection
• Control system signal processing

Single Bipolar Transistors Procurement Notes

Verify the component authenticity by checking the manufacturer marking against official Sanyo documentation. Ensure the CP package variant matches the required footprint. Confirm RoHS compliance status if environmental regulations apply to the final assembly. Cross-reference the full part number including suffixes to guarantee electrical parameter alignment with design specifications.

Single Bipolar Transistors Selection Notes

Select this component when a small-form-factor NPN transistor with high voltage tolerance is required. The 150 MHz frequency response supports moderate-speed switching tasks. Consider the 200 mW power limit for thermal management in dense layouts. This part serves as a direct replacement for legacy through-hole equivalents where space constraints are critical.

Single Bipolar Transistors Part Context

This transistor belongs to Sanyo's discrete semiconductor product line, specifically within the single bipolar transistor category. It is often paired with complementary PNP devices like the 2SA1257 for push-pull configurations. The CP package distinguishes it from standard SOT-23 variants, offering specific thermal and mechanical properties for surface-mount technology processes.

Single Bipolar Transistors Replacement Considerations

Public confirmed substitute part numbers are not available in the provided documentation. Verify pinout compatibility before substituting with generic NPN transistors. Ensure replacement parts meet the 160 V breakdown and 80 mA current requirements.