2SC3143-4-TB-E

Single Bipolar Transistors Overview

The 2SC3143-4-TB-E is a single NPN bipolar junction transistor manufactured by onsemi. It features a collector-emitter voltage rating of 160 V and a maximum collector current of 80 mA. The device operates with a transition frequency of 150 MHz and dissipates up to 200 mW of power. Packaged in a surface-mount 3-pin CP (SOT-23) configuration, it utilizes silicon epitaxial planar technology for reliable performance in small signal applications.

Single Bipolar Transistors Feature Summary

• NPN silicon epitaxial planar construction
• Surface mount 3-pin CP package
• High voltage capability of 160 V

Single Bipolar Transistors Applications

• Small signal amplification
• Switching circuits
• General purpose electronic devices

Single Bipolar Transistors Procurement Notes

Verify the manufacturer part number against official onsemi documentation to ensure authenticity. Confirm that the component matches the specified 3-CP package and electrical ratings. Request original datasheets from authorized distributors to validate specifications before procurement.

Single Bipolar Transistors Selection Notes

Select this component when a small signal NPN transistor with 160 V breakdown voltage is required. Ensure the application current does not exceed 80 mA and power dissipation remains within 200 mW limits. Verify compatibility with surface mount assembly processes requiring a 3-pin CP footprint.

Single Bipolar Transistors Part Context

This transistor belongs to the single bipolar transistor category from onsemi. It serves as a discrete semiconductor device for low-power circuit designs. The model is distinct from other variants in the series based on its specific packaging and electrical characteristics defined in the product data sheet.

Single Bipolar Transistors Replacement Considerations

Consult official substitution lists for equivalent NPN transistors with matching voltage and current ratings. Verify pinout compatibility for the 3-CP package before replacing. Cross-reference parameters such as transition frequency and power dissipation to ensure functional equivalence.