2SC3143-5-TB-E

Single Bipolar Transistors Overview

The onsemi 2SC3143-5-TB-E is an NPN small-signal bipolar junction transistor (BJT) designed for surface-mount applications. It features a collector-emitter breakdown voltage of 160 V and a maximum continuous collector current of 80 mA. The device operates with a transition frequency of 150 MHz and dissipates up to 200 mW of power. It utilizes a TO-236-3, SC-59, or SOT-23-3 package. Key electrical characteristics include a minimum DC current gain of 60 at 10 mA and 5 V, and a collector cutoff current of 100 nA.

Single Bipolar Transistors Feature Summary

• NPN silicon construction optimized for general-purpose switching and amplification
• High collector-emitter breakdown voltage suitable for medium-voltage circuits
• Compact surface-mount footprint facilitating automated assembly

Single Bipolar Transistors Applications

• General-purpose signal amplification
• Switching applications in low-power electronics
• Driver stages for small-signal processing

Single Bipolar Transistors Procurement Notes

Verify the specific ordering suffix matches the required tape-and-reel configuration. Confirm that the component status remains active within the manufacturer's portfolio before finalizing procurement plans. Ensure compatibility with standard SOT-23 reflow profiles during assembly integration.

Single Bipolar Transistors Selection Notes

Select this component when a high-voltage NPN transistor is required in a minimal surface-mount package. The 160 V rating distinguishes it from lower-voltage alternatives like the 2SC3143-4 variant. Consider the 150 MHz transition frequency for moderate-speed signal handling requirements.

Single Bipolar Transistors Part Context

This part belongs to the 2SC3143 series of single NPN transistors. It shares the same physical package and basic topology as variants such as the 2SC3143-4-TB-E, differing primarily in breakdown voltage specifications. The series targets cost-sensitive consumer and industrial electronics requiring reliable small-signal performance.

Single Bipolar Transistors Replacement Considerations

The 2SC3143-4-TB-E serves as a direct pin-compatible alternative within the same series, though it offers a lower collector-emitter breakdown voltage. Verify voltage headroom requirements before substituting to ensure circuit reliability under peak operating conditions.