2SC3264

Single Bipolar Transistors Overview

The EVVO 2SC3264 is a silicon NPN triple-diffused power transistor designed for high-voltage audio amplifier applications. It features a minimum collector-emitter breakdown voltage of 250 V and supports a maximum continuous collector current of 16 A. The device handles up to 230 W of collector power dissipation at 25°C case temperature. It exhibits a DC current gain ranging from 8 to 80 under specified test conditions and includes a transition frequency of 4 MHz. The component utilizes a TO-264 flange mount package with a junction-to-case thermal resistance of 0.63 °C/W.

Single Bipolar Transistors Feature Summary

• Triple diffused silicon NPN construction for robust power handling
• High collector-emitter voltage rating suitable for demanding amplifier stages
• Complementary pairing capability with MJL21195 transistors

Single Bipolar Transistors Applications

• Output stage for 100-W high-fidelity audio frequency amplifiers
• Power amplifier circuits requiring high voltage tolerance
• Complementary push-pull configurations in audio systems

Single Bipolar Transistors Procurement Notes

Verify the manufacturer designation on the component marking against the official EVVO datasheet specifications. Confirm the physical package type matches the TO-264 flange mount dimensions provided in the documentation. Ensure that sourcing channels provide authentic parts to maintain the guaranteed electrical parameters, particularly the breakdown voltage and current ratings.

Single Bipolar Transistors Selection Notes

Select this component when designing audio output stages requiring a minimum 250 V collector-emitter voltage and high current capacity up to 16 A. Consider the thermal management requirements associated with the 230 W power dissipation rating and the specific TO-264 mounting style. Evaluate compatibility with complementary PNP devices like the MJL21195 for balanced bridge or push-pull topologies.

Single Bipolar Transistors Part Context

This transistor belongs to the category of silicon NPN power transistors intended for audio frequency power amplification. It is engineered to operate within strict thermal limits defined by its junction temperature rating. The design focuses on providing reliable performance in high-power consumer audio equipment where voltage headroom and current drive are critical.

Single Bipolar Transistors Replacement Considerations

The datasheet explicitly identifies the MJL21195 as the complementary counterpart for this device. Designers should verify pinout compatibility and thermal characteristics when substituting components in existing amplifier circuits.