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2SC3264 is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists Sanken Electric USA Inc.. Its product description is TRANS NPN 230V 17A MT-200. Review the specifications below when checking this part for your BOM.
The Sanken Electric 2SC3264 is a silicon NPN epitaxial planar power transistor designed for audio and general-purpose applications. It serves as the complementary device to the 2SA1295 PNP transistor. The component features a maximum collector current of 17 A, a collector-emitter voltage rating of 230 V, and a total power dissipation capacity of 200 W. It utilizes a three-pin through-hole flange mount package (MT-200) constructed with plastic/epoxy material. The device supports a maximum operating temperature of 150 °C and has a minimum DC current gain (hFE) of 50.
Verify the manufacturer origin, as multiple entities list this part number. Confirm the physical package matches the MT-200 flange mount specification. Ensure the device meets RoHS compliance requirements if applicable to your assembly process. Cross-reference the specific datasheet version to confirm electrical parameters align with your design constraints before integration.
Select this component when designing high-power audio stages requiring matched NPN/PNP pairs. Its 200 W dissipation rating supports demanding load conditions. The flange mount style necessitates appropriate heatsinking infrastructure. Consider the 2SA1295 as the direct complementary partner for balanced circuit symmetry in class AB or similar amplifier topologies.
Sanken Electric manufactures the 2SC3264 as part of its discrete semiconductor portfolio. The company specializes in power electronics solutions for automotive, industrial, and consumer applications. This transistor belongs to a series of high-performance audio transistors engineered for reliability and consistent performance in critical signal paths.
Publicly confirmed substitute part numbers are not available in the provided documentation. Verify compatibility with existing circuit designs before attempting substitution with other NPN power transistors.
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