2SC3311ASA

Single Bipolar Transistors Overview

The Panasonic 2SC3311ASA is a silicon NPN epitaxial planar transistor designed for low-frequency amplification. It features an NS-B1 package suitable for high-density mounting and radial taping supply. Key electrical parameters include a collector-emitter voltage of 50 V, a collector current of 100 mA, and a collector power dissipation of 300 mW at 25°C. The device offers a forward current transfer ratio (hFE) ranging from 160 to 460 depending on the rank, with a transition frequency of 150 MHz.

Single Bipolar Transistors Feature Summary

• Optimized for high-density mounting applications
• Compatible with radial taping supply methods
• Designed specifically for low-frequency amplification tasks

Single Bipolar Transistors Applications

• General electronic equipment
• Office equipment
• Communications equipment
• Measuring instruments

Single Bipolar Transistors Procurement Notes

Verify component authenticity through authorized distributors or official Panasonic channels. Confirm the specific hFE rank required for your circuit design, as performance varies by classification. Ensure compliance with RoHS directives if applicable to your manufacturing standards. Review the latest product standards before finalizing procurement to account for potential specification updates.

Single Bipolar Transistors Selection Notes

Select this component for standard low-frequency amplification circuits requiring moderate gain and voltage handling. Consider the available hFE ranks to match amplifier linearity requirements. Verify that the thermal environment allows operation within the 300 mW dissipation limit without exceeding the junction temperature rating. Ensure the application does not require automotive or aerospace-grade reliability.

Single Bipolar Transistors Part Context

This NPN transistor serves as a complementary pair to the 2SA1309A PNP device. It belongs to Panasonic's general-purpose discrete semiconductor lineup intended for standard industrial and consumer electronics. The component utilizes an epitaxial planar structure to ensure stable electrical characteristics across varying ambient temperatures.

Single Bipolar Transistors Replacement Considerations

Consult official documentation for verified substitute part numbers. Generic replacements may differ in hFE ranking or transition frequency specifications.