Single Bipolar Transistors 2SC3324-BL(TE85L,F product image

2SC3324-BL(TE85L,F

$0.28
  • Description:TRANS NPN 120V 0.1A TO-236
  • Series:-

SKU:b13ef3679b2e Category: Brand:

  
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2SC3324-BL(TE85L,F is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists Toshiba Semiconductor and Storage. Its product description is TRANS NPN 120V 0.1A TO-236. Review the specifications below when checking this part for your BOM.

Single Bipolar Transistors specifications for 2SC3324-BL(TE85L,F

  • Description:TRANS NPN 120V 0.1A TO-236
  • Series:-
  • Mfr:Toshiba Semiconductor and Storage
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Transistor Type:NPN
  • Current - Collector (Ic) (Max):100 mA
  • Voltage - Collector Emitter Breakdown (Max):120 V
  • Vce Saturation (Max) @ Ib, Ic:300mV @ 1mA, 10mA
  • Current - Collector Cutoff (Max):100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce:350 @ 2mA, 6V
  • Power - Max:150 mW
  • Frequency - Transition:100MHz
  • Operating Temperature:125°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package:TO-236
  • Grade:-
  • Qualification:-

Single Bipolar Transistors datasheet and documents for 2SC3324-BL(TE85L,F

2SC3324-BL(TE85L,F

Single Bipolar Transistors Overview

The Toshiba 2SC3324-BL(TE85L,F) is an NPN silicon epitaxial planar transistor designed for low-noise audio frequency amplification. It features a collector-emitter voltage of 120 V and a continuous collector current capability of 100 mA. The device offers high DC current gain ranging from 200 to 700, with excellent linearity characteristics. Noise figure specifications are 0.2 dB typical at 1 kHz and 3 dB maximum. Packaged in the SOT-23 surface-mount format, it serves as a complementary pair to the 2SA1312 PNP transistor.

Single Bipolar Transistors Feature Summary

  • Engineered for low-noise audio frequency applications with minimal signal degradation
  • Provides high DC current gain with superior linearity across operating ranges
  • Features a compact SOT-23 surface-mount package suitable for space-constrained designs

Single Bipolar Transistors Applications

  • Audio frequency low noise amplifier circuits
  • Small-signal amplification stages
  • Complementary pairs with 2SA1312 transistors

Single Bipolar Transistors Procurement Notes

Verify the specific ordering suffix TE85L,F against official Toshiba Semiconductor documentation to confirm reel packaging and tape-and-reel specifications. Ensure the component matches the exact datasheet revision for electrical tolerances. Cross-reference the manufacturer part number directly with authorized distributors to prevent counterfeit components. Confirm RoHS compliance status through the official product specification sheet before integration into regulated assemblies.

Single Bipolar Transistors Selection Notes

Select this component when designing audio pre-amplifiers requiring low noise figures and high voltage headroom. The 120 V collector-emitter rating supports higher supply voltages compared to standard small-signal transistors. Verify that the required hFE bin (G or L) aligns with circuit biasing needs. Consider the SOT-23 footprint constraints during PCB layout. Evaluate thermal dissipation limits relative to ambient temperature conditions.

Single Bipolar Transistors Part Context

This NPN transistor belongs to Toshiba's general-purpose small-signal transistor lineup optimized for audio performance. It complements the 2SA1312 PNP device for push-pull configurations. The series emphasizes low noise and high gain consistency for precision analog signal processing tasks.

Single Bipolar Transistors Replacement Considerations

The 2SC3324-GR is a documented variant within the same family offering similar electrical characteristics. Verify pinout compatibility and thermal resistance values when substituting.

2SC3324-BL(TE85L,F2SC3324-BL(TE85L,F
$0.28
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