2SC3324GRTE85LF

Single Bipolar Transistors Overview

The Toshiba Semiconductor and Storage 2SC3324GRTE85LF is an NPN epitaxial planar transistor in a surface-mount SOT-23 package. It provides a collector current capability of 100 mA and a collector-emitter voltage rating of 120 V. The device features a DC current gain (hFE) ranging from 200 to 700, with specific grading available for higher performance bands. Key electrical characteristics include a transition frequency of 100 MHz and low noise figures, making it suitable for audio frequency applications.

Single Bipolar Transistors Feature Summary

• Designed for audio frequency low noise amplifier applications
• Offers high voltage ratings with excellent hFE linearity
• Complementary to the 2SA1312 PNP transistor

Single Bipolar Transistors Applications

• Audio frequency low noise amplification
• Small-signal amplification circuits
• General purpose switching applications

Single Bipolar Transistors Procurement Notes

Verify the complete part number against official Toshiba Semiconductor documentation to ensure correct suffix alignment. Confirm that the TE85LF designation corresponds to the required tape-and-reel packaging format. Cross-reference the specific hFE classification grade required for your circuit design against the manufacturer's binning specifications before finalizing procurement orders.

Single Bipolar Transistors Selection Notes

Select this component when designing circuits requiring high voltage handling up to 120 V combined with low noise performance. Ensure the thermal management strategy accommodates the 150 mW power dissipation limit at ambient temperatures. Verify that the SOT-23 footprint matches the PCB layout constraints and that the required hFE gain band aligns with the specific application's signal integrity needs.

Single Bipolar Transistors Part Context

This component belongs to the 2SC3324 series of NPN transistors manufactured by Toshiba Semiconductor. It is engineered specifically for audio frequency applications where low noise and high linearity are critical. The device utilizes an epitaxial planar process to achieve its specified electrical characteristics within a compact surface-mount form factor.

Single Bipolar Transistors Replacement Considerations

The datasheet explicitly identifies the 2SA1312 as the complementary PNP transistor for this series. Direct replacement requires verifying pinout compatibility and ensuring the substitute meets the 120 V and 100 mA requirements.