2SC3325-O(TE85L,F)

$0.25

Description：TRANS NPN 50V 0.5A S-MINI
Series：-

SKU:6bc84bfdc554 Category: Single Bipolar Transistors Brand: Toshiba Semiconductor and Storage

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Product introduction

2SC3325-O(TE85L,F) is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists Toshiba Semiconductor and Storage. Its product description is TRANS NPN 50V 0.5A S-MINI. Review the specifications below when checking this part for your BOM.

Single Bipolar Transistors specifications for 2SC3325-O(TE85L,F)

Description：TRANS NPN 50V 0.5A S-MINI
Series：-
Mfr：Toshiba Semiconductor and Storage
Package：Tape & Reel (TR),Cut Tape (CT)
Transistor Type：NPN
Current - Collector (Ic) (Max)：500 mA
Voltage - Collector Emitter Breakdown (Max)：50 V
Vce Saturation (Max) @ Ib, Ic：250mV @ 10mA, 100mA
Current - Collector Cutoff (Max)：100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce：70 @ 100mA, 1V
Power - Max：200 mW
Frequency - Transition：300MHz
Operating Temperature：150°C (TJ)
Mounting Type：Surface Mount
Package / Case：TO-236-3, SC-59, SOT-23-3
Supplier Device Package：S-Mini
Grade：-
Qualification：-

Single Bipolar Transistors datasheet and documents for 2SC3325-O(TE85L,F)

2SC3325-O(TE85L,F)

Single Bipolar Transistors Overview

The Toshiba 2SC3325-O(TE85L,F) is a silicon NPN epitaxial transistor manufactured using the PCT process. It features a JEDEC TO-236MOD (SOT-23) package with a typical weight of 0.012 g. The device provides a minimum collector-emitter voltage (VCEO) of 50 V and supports a maximum collector current (IC) of 500 mA. Electrical characteristics include a transition frequency (fT) of 300 MHz, a DC current gain (hFE) ranging from 70 to 240 depending on classification, and a low collector-emitter saturation voltage of 0.25 V maximum at specified test conditions.

Single Bipolar Transistors Feature Summary

Designed for audio frequency low power amplifier applications
Suitable for driver stage amplifier configurations
Capable of high-speed switching operations

Single Bipolar Transistors Applications

Audio Frequency Low Power Amplifier Applications
Driver Stage Amplifier Applications
Switching Applications

Single Bipolar Transistors Procurement Notes

Verify the specific ordering suffix against official Toshiba Semiconductor documentation to confirm exact binning and packaging specifications. Ensure compliance with all applicable export laws and environmental regulations before procurement. Review the latest reliability handbook for derating guidelines to maintain operational integrity under varying thermal and electrical loads.

Single Bipolar Transistors Selection Notes

Select this component when a compact NPN transistor with a 50 V breakdown voltage and moderate current handling capability is required. The device offers excellent hFE linearity and a high transition frequency suitable for audio and general-purpose amplification. Confirm that the chosen hFE classification meets the specific circuit requirements for gain stability.

Single Bipolar Transistors Part Context

This component belongs to the family of small-signal silicon NPN transistors produced by Toshiba Semiconductor and Storage. It utilizes the proprietary PCT process technology to achieve reliable performance in miniature surface-mount packages. The part serves as a complementary match to the 2SA1313 PNP transistor for balanced circuit designs.

Single Bipolar Transistors Replacement Considerations

The datasheet identifies the 2SA1313 as the complementary PNP counterpart. Verify pinout compatibility and absolute maximum ratings before substituting with other SOT-23 packaged NPN transistors.