Single Bipolar Transistors 2SC3325-Y,LF product image

2SC3325-Y,LF

$0.21
  • Description:TRANS NPN 50V 0.5A S-MINI
  • Series:-

SKU:333fa244fd87 Category: Brand:

  
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2SC3325-Y,LF is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists Toshiba Semiconductor and Storage. Its product description is TRANS NPN 50V 0.5A S-MINI. Review the specifications below when checking this part for your BOM.

Single Bipolar Transistors specifications for 2SC3325-Y,LF

  • Description:TRANS NPN 50V 0.5A S-MINI
  • Series:-
  • Mfr:Toshiba Semiconductor and Storage
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Transistor Type:NPN
  • Current - Collector (Ic) (Max):500 mA
  • Voltage - Collector Emitter Breakdown (Max):50 V
  • Vce Saturation (Max) @ Ib, Ic:250mV @ 10mA, 100mA
  • Current - Collector Cutoff (Max):100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce:120 @ 100mA, 1V
  • Power - Max:200 mW
  • Frequency - Transition:300MHz
  • Operating Temperature:150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package:S-Mini
  • Grade:-
  • Qualification:-

Single Bipolar Transistors datasheet and documents for 2SC3325-Y,LF

2SC3325-Y,LF

Single Bipolar Transistors Overview

The Toshiba 2SC3325-Y,LF is a silicon NPN epitaxial transistor designed for audio frequency low power amplifier applications. It features a high collector-emitter voltage of 50 V and a maximum collector current of 500 mA. The device utilizes the PCT process and is housed in a small SC-59 package. The 'Y' suffix indicates a DC current gain (hFE) classification of 120 to 240 at IC = 100 mA, with a minimum hFE of 40 at IC = 400 mA.

Single Bipolar Transistors Feature Summary

  • Excellent hFE linearity for accurate signal amplification
  • High voltage rating of 50 V for robust operation
  • Complementary pairing available with the 2SA1313 PNP transistor

Single Bipolar Transistors Applications

  • Audio frequency low power amplifier circuits
  • Driver stage amplification
  • General switching applications

Single Bipolar Transistors Procurement Notes

Verify the ordering suffix matches the required hFE binning specifications. Confirm that the component meets all applicable environmental compliance standards before integration into final designs. Review the manufacturer's reliability handbook for derating guidelines under heavy load conditions.

Single Bipolar Transistors Selection Notes

Select this component when a high-voltage NPN transistor with moderate current handling is required for audio or driver stages. Ensure the specific Y-hFE binning aligns with circuit gain requirements. Verify thermal management capabilities within the specified junction temperature limits.

Single Bipolar Transistors Part Context

This part belongs to Toshiba's lineup of general-purpose small-signal transistors manufactured using the PCT process. It serves as a complementary pair to the 2SA1313, facilitating push-pull configurations in audio and power driver circuits where compact packaging and reliable performance are essential.

Single Bipolar Transistors Replacement Considerations

The 2SA1313 is the designated complementary PNP counterpart. Cross-referencing with other NPN transistors requires verifying matching voltage ratings, current capabilities, and package dimensions to ensure functional compatibility.

Single Bipolar Transistors FAQ

What does the 'Y' suffix indicate in the 2SC3325-Y,LF designation?

The 'Y' suffix specifies the DC current gain (hFE) classification, indicating an hFE range of 120 to 240 at IC = 100 mA.

Is the 2SC3325 suitable for use in automotive safety systems?

No. The datasheet explicitly restricts use in equipment requiring extraordinarily high reliability, including automotive safety devices and transportation control systems.

What is the transition frequency of the 2SC3325?

The transition frequency (fT) is typically 300 MHz when measured at VCE = 6 V and IC = 20 mA.

2SC3325-Y,LF2SC3325-Y,LF
$0.21
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