2SC3326-A,LF

Single Bipolar Transistors Overview

The Toshiba 2SC3326-A,LF is a silicon NPN epitaxial transistor manufactured using the PCT process. It features a collector-emitter voltage of 20 V and a collector current rating of 300 mA. The device provides a high DC current gain (hFE) ranging from 200 to 1200 for the 'A' rank classification. Key electrical characteristics include a low collector-emitter saturation voltage of 0.042 V typical at 30 mA, a transition frequency of 30 MHz, and an emitter-base voltage of 25 V. It operates within a junction temperature range up to 150°C.

Single Bipolar Transistors Feature Summary

• High emitter-base voltage capability of 25 V
• Low on-resistance of 1 Ω typical with base drive
• High reverse hFE of 150 typical in reverse operation
• Small JEDEC TO-236MOD package

Single Bipolar Transistors Applications

• Muting circuits
• Switching applications

Single Bipolar Transistors Procurement Notes

Verify the specific ordering suffix against official Toshiba Semiconductor documentation to confirm environmental compliance status and exact binning specifications. Confirm that the 'A' rank designation aligns with the required hFE range for your design. Ensure all operating parameters remain within absolute maximum ratings to maintain reliability standards defined by the manufacturer.

Single Bipolar Transistors Selection Notes

Select this component when designing muting or switching circuits requiring high emitter-base voltage tolerance and low on-resistance. The device offers a wide DC current gain range suitable for various amplification needs. Consider the small SC-59/TO-236MOD package for space-constrained surface-mount designs. Evaluate thermal dissipation requirements based on the FR4 board mounting conditions specified in the datasheet.

Single Bipolar Transistors Part Context

This part belongs to the Toshiba 2SC3326 series of silicon NPN epitaxial transistors. It is designed specifically for muting and switching applications. The series utilizes the PCT process technology to achieve high performance metrics including high current gain and low saturation voltage within a compact surface-mount footprint.

Single Bipolar Transistors Replacement Considerations

Consult official Toshiba documentation for verified substitute part numbers. Cross-referencing requires matching electrical parameters such as VCEO, IC, and package type. Verify compatibility with existing circuit constraints before implementation.

Single Bipolar Transistors FAQ

What is the typical collector-emitter saturation voltage?

The typical collector-emitter saturation voltage is 0.042 V when measured at a collector current of 30 mA and a base current of 3 mA.

What is the DC current gain range for the A rank?

For the A rank classification, the DC current gain (hFE) ranges from 200 to 700 under test conditions of VCE = 2 V and IC = 4 mA.

Is this component qualified for automotive applications?

The 2SC3326 series is noted as AEC-Q101 qualified; however, detailed information regarding specific qualification status should be confirmed directly with Toshiba sales representatives.