2SC3328-Y,T6CKF(J

Single Bipolar Transistors Overview

The Toshiba 2SC3328-Y,T6CKF(J is a silicon NPN epitaxial transistor manufactured using the PCT process. It features an absolute maximum collector current of 2 A and a collector-emitter voltage rating of 80 V. The device provides a DC current gain (hFE) ranging from 120 to 240 at 0.5 A, with a transition frequency of 100 MHz. It exhibits a low saturation voltage of 0.5 V maximum at 1 A and a typical storage time of 1.0 μs. Power dissipation is rated at 900 mW within a TO-92MOD package.

Single Bipolar Transistors Feature Summary

• Designed for power amplifier applications
• Optimized for high-speed switching operations
• Features low collector-emitter saturation voltage
• Complementary to the 2SA1315 PNP transistor

Single Bipolar Transistors Applications

• Power amplifier circuits
• High-speed power switching applications

Single Bipolar Transistors Procurement Notes

Verify the specific ordering suffix against official Toshiba Semiconductor documentation to confirm environmental compliance status, such as RoHS compatibility, as indicated by lot number markings. Ensure the component meets the required hFE classification range for your design. Always consult the latest reliability handbook for derating guidelines under heavy loads or extreme temperatures.

Single Bipolar Transistors Selection Notes

Select this component when designing circuits requiring an NPN transistor capable of handling up to 2 A continuous collector current. It is suitable for applications demanding a breakdown voltage of at least 80 V. Consider its complementary pairing with the 2SA1315 for push-pull configurations. Evaluate the thermal management requirements given the 900 mW power dissipation limit in the specified package.

Single Bipolar Transistors Part Context

This part belongs to the 2SC3328 series of general-purpose small signal transistors produced by Toshiba Semiconductor and Storage. These devices are widely utilized in consumer electronics, office equipment, and industrial control systems. The series is characterized by robust performance in both linear amplification and rapid switching modes, making it a standard choice for various electronic designs.

Single Bipolar Transistors Replacement Considerations

The datasheet explicitly identifies the 2SA1315 as the complementary counterpart. No other direct substitute part numbers are documented in the provided source material.

Single Bipolar Transistors FAQ

What is the minimum DC current gain for the Y classification?

For the Y classification, the minimum DC current gain (hFE) is 120 when measured at a collector current of 0.5 A and a collector-emitter voltage of 2 V.

Is this transistor suitable for audio power amplification?

Yes, the datasheet lists power amplifier applications as a primary use case for this component.

What is the maximum collector-base voltage rating?

The absolute maximum rating for collector-base voltage (VCBO) is 80 V.