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The CEL 2SC3356-T1B-R24-A is an NPN silicon epitaxial RF transistor designed for microwave low-noise amplification. It utilizes a 3-pin Minimold package and operates within the Ultra High Frequency band. Key electrical parameters include a collector-to-base voltage of 20 V, a collector-to-emitter voltage of 12 V, and a maximum collector current of 100 mA. The device features a typical noise figure of 1.1 dB and a gain bandwidth product of 7 GHz at specified bias conditions.
Verify the specific hFE classification suffix (R24) to ensure correct DC current gain binning for your design requirements. Confirm that the Pb-Free tape and reel packaging meets your automated assembly specifications. Check for phase-out status as this component may be subject to discontinuation by the manufacturer.
Select the R24 variant when a DC current gain range of 80 to 160 is required. Ensure the operating environment remains within the specified junction temperature limits. Verify that the 3-pin Minimold footprint aligns with your PCB layout constraints before finalizing the component choice.
This part belongs to the 2SC3356 series originally developed by California Eastern Laboratories and later supported by Renesas Electronics. The T1B-R24-A suffix indicates a specific hFE binning (Rank R/YR), Pb-free manufacturing process, and tape-and-reel packaging format for surface-mount assembly.
Direct substitutes include the NE85633-T1B-R24-A from Renesas. Other manufacturers producing equivalent NPN RF transistors in SOT-23 or Minimold packages should be evaluated based on matching noise figures and gain bandwidth products.