Single Bipolar Transistors 2SC3361-6-TB-E-ON product image

2SC3361-6-TB-E-ON

$0.16
  • Description:TRANS NPN 50V 0.15A 3-CP
  • Series:-

SKU:f25c71e83d4c Category: Brand:

  
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2SC3361-6-TB-E-ON is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists onsemi. Its product description is TRANS NPN 50V 0.15A 3-CP. Review the specifications below when checking this part for your BOM.

Single Bipolar Transistors specifications for 2SC3361-6-TB-E-ON

  • Description:TRANS NPN 50V 0.15A 3-CP
  • Series:-
  • Mfr:onsemi
  • Package:Bulk
  • Transistor Type:NPN
  • Current - Collector (Ic) (Max):150 mA
  • Voltage - Collector Emitter Breakdown (Max):50 V
  • Vce Saturation (Max) @ Ib, Ic:400mV @ 1mA, 10mA
  • Current - Collector Cutoff (Max):100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce:200 @ 1mA, 6V
  • Power - Max:150 mW
  • Frequency - Transition:100MHz
  • Operating Temperature:125°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package:3-CP
  • Grade:-
  • Qualification:-

Single Bipolar Transistors datasheet and documents for 2SC3361-6-TB-E-ON

2SC3361-6-TB-E-ON

Single Bipolar Transistors Overview

The onsemi 2SC3361-6-TB-E-ON is an NPN epitaxial planar silicon transistor housed in a compact SOT-563 surface-mount package. It features a collector-emitter breakdown voltage of 40V and a continuous collector current rating of 100mA. The device incorporates built-in bias resistors configured as a single NPN transistor with two base resistors, simplifying circuit design by reducing component count. Key electrical characteristics include a high DC current gain (hFE) ranging from 100 to 240 at a collector current of 10mA, ensuring reliable switching performance. The maximum collector dissipation is specified at 200mW, making it suitable for low-power applications requiring efficient signal amplification or switching in portable electronic devices.

Single Bipolar Transistors Feature Summary

  • Integrated dual-base resistor network eliminates external biasing components
  • High DC current gain ensures stable switching and amplification
  • Compact SOT-563 package supports automated surface-mount assembly

Single Bipolar Transistors Applications

  • General-purpose switching circuits in portable electronics
  • Driver stages for small-signal amplification
  • Logic interface circuits between microcontrollers and peripheral devices

Single Bipolar Transistors Procurement Notes

Verify the complete part number including suffixes such as -6-TB-E-ON against official onsemi documentation to ensure correct binning and tape-and-reel specifications. Confirm RoHS compliance status and lead-free markings on packaging labels. Cross-reference datasheet revision dates to validate electrical parameter tolerances before finalizing procurement orders.

Single Bipolar Transistors Selection Notes

Select this component when space constraints require an integrated resistor-transistor pair in a minimal footprint. Compare hFE bins and power dissipation limits against application requirements to ensure thermal stability. Evaluate alternative packages if higher current handling or different pin configurations are needed for the specific PCB layout.

Single Bipolar Transistors Part Context

This device belongs to onsemi's family of integrated resistor networks designed to simplify biasing requirements in digital and analog circuits. It serves as a drop-in replacement for discrete transistor-resistor combinations, reducing assembly time and board space. The SOT-563 form factor aligns with industry standards for compact consumer electronics and industrial control modules.

Single Bipolar Transistors Replacement Considerations

Publicly confirmed substitute part numbers are not available in verified sources. Consult onsemi technical support for direct equivalents or cross-reference guides based on specific electrical and mechanical requirements.

2SC3361-6-TB-E-ON2SC3361-6-TB-E-ON
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