Single Bipolar Transistors 2SC3392-5-TB-E product image

2SC3392-5-TB-E

$0.07
  • Description:BIP NPN 0.5A 50V
  • Series:*

SKU:d5d20210413b Category: Brand:

  
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2SC3392-5-TB-E is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists onsemi. Its product description is BIP NPN 0.5A 50V. Review the specifications below when checking this part for your BOM.

Single Bipolar Transistors specifications for 2SC3392-5-TB-E

  • Description:BIP NPN 0.5A 50V
  • Series:*
  • Mfr:onsemi
  • Package:Bulk
  • Transistor Type:-
  • Current - Collector (Ic) (Max):-
  • Voltage - Collector Emitter Breakdown (Max):-
  • Vce Saturation (Max) @ Ib, Ic:-
  • Current - Collector Cutoff (Max):-
  • DC Current Gain (hFE) (Min) @ Ic, Vce:-
  • Power - Max:-
  • Frequency - Transition:-
  • Operating Temperature:-
  • Mounting Type:-
  • Package / Case:-
  • Supplier Device Package:-
  • Grade:-
  • Qualification:-

Single Bipolar Transistors datasheet and documents for 2SC3392-5-TB-E

2SC3392-5-TB-E

Single Bipolar Transistors Overview

The onsemi 2SC3392-5-TB-E is an NPN silicon bipolar junction transistor designed for high-frequency applications. It features a maximum collector-emitter voltage of 50 V and a continuous collector current of 500 mA. The device operates up to a frequency of 1 GHz with a transition frequency (fT) supporting large current capacity. It is housed in an ultrasmall SMD package, specifically SC-59-3 (SOT-23), suitable for surface mount technology. The component has a maximum power dissipation of 350 mW and can withstand operating temperatures up to +150°C.

Single Bipolar Transistors Feature Summary

  • High transition frequency capability for RF signal amplification
  • Ultrasmall surface-mount package design enabling compact circuit layouts
  • Large current handling capacity relative to physical size

Single Bipolar Transistors Applications

  • RF signal amplification stages
  • High-frequency switching circuits
  • Compact consumer electronic devices requiring small form factors

Single Bipolar Transistors Procurement Notes

Verify the specific datasheet version and pinout configuration before integration, as manufacturing sources may vary between onsemi and legacy Sanyo specifications. Confirm that the SC-59-3 package dimensions align with your PCB footprint requirements. Ensure thermal management strategies account for the 350 mW power dissipation limit in enclosed designs. Check for end-of-life status or obsolescence notices from the manufacturer prior to finalizing procurement plans.

Single Bipolar Transistors Selection Notes

Select this component when a balance between moderate current capacity (500 mA) and high-speed operation (1 GHz) is required in a minimal footprint. It is appropriate for designs where space constraints are critical but standard logic-level voltages are insufficient. Consider the 50 V breakdown rating for low-voltage supply rails. Evaluate thermal performance if the device will operate near its maximum temperature limits in dense assemblies.

Single Bipolar Transistors Part Context

This part belongs to the family of single NPN bipolar transistors optimized for radio frequency use. It serves as a compact alternative to larger through-hole packages while maintaining robust electrical characteristics. The designation indicates a specific tape-and-reel packaging format intended for automated surface-mount assembly processes.

Single Bipolar Transistors Replacement Considerations

Public confirmed substitute part numbers: 2SC3392-4-TB-E.

2SC3392-5-TB-E2SC3392-5-TB-E
$0.07
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