Single Bipolar Transistors 2SC3416E product image

2SC3416E

$0.20
  • Description:TRANS NPN 200V 0.1A TO-126
  • Series:-

SKU:352056af0cbb Category: Brand:

  
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2SC3416E is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists onsemi. Its product description is TRANS NPN 200V 0.1A TO-126. Review the specifications below when checking this part for your BOM.

Single Bipolar Transistors specifications for 2SC3416E

  • Description:TRANS NPN 200V 0.1A TO-126
  • Series:-
  • Mfr:onsemi
  • Package:Bulk
  • Transistor Type:NPN
  • Current - Collector (Ic) (Max):100 mA
  • Voltage - Collector Emitter Breakdown (Max):200 V
  • Vce Saturation (Max) @ Ib, Ic:600mV @ 2mA, 20mA
  • Current - Collector Cutoff (Max):100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce:40 @ 10mA, 10V
  • Power - Max:1.2 W
  • Frequency - Transition:70MHz
  • Operating Temperature:150°C (TJ)
  • Mounting Type:Through Hole
  • Package / Case:TO-225AA, TO-126-3
  • Supplier Device Package:TO-126
  • Grade:-
  • Qualification:-

Single Bipolar Transistors datasheet and documents for 2SC3416E

2SC3416E

Single Bipolar Transistors Overview

The onsemi 2SC3416E is a single NPN silicon power bipolar transistor designed for amplifier applications. It features a maximum collector current of 0.1 A and a collector-emitter voltage rating of 200 V. The device has a minimum DC current gain (hFE) of 100 and a transition frequency of 70 MHz. Packaged in a TO-126 through-hole flange mount case, it supports an operating junction temperature up to 150°C.

Single Bipolar Transistors Feature Summary

  • High breakdown voltage capability suitable for demanding power environments
  • Integrated thermal design via flange mount package for efficient heat dissipation
  • Optimized for linear amplifier operations with stable current gain

Single Bipolar Transistors Applications

  • Linear amplifier circuits
  • Power switching applications requiring high voltage isolation
  • Industrial control systems utilizing through-hole mounting

Single Bipolar Transistors Procurement Notes

Verify the specific suffix designation when ordering, as variants such as -SA may exist within the product family. Confirm that the required hFE binning meets the minimum threshold of 100 for the intended circuit design. Ensure the procurement source provides authentic components from authorized channels to guarantee performance reliability and compliance with specified electrical parameters.

Single Bipolar Transistors Selection Notes

Select this component for designs requiring a 200V NPN transistor with moderate current handling capabilities. The TO-126 package facilitates easy integration into legacy or standard through-hole PCB layouts. Consider the 70 MHz transition frequency when evaluating high-speed signal amplification requirements against lower-frequency alternatives.

Single Bipolar Transistors Part Context

This part belongs to the broader category of discrete semiconductor transistors manufactured by onsemi. It serves as a specialized solution for power management and signal processing tasks where robust voltage ratings are critical. The TO-126 form factor ensures compatibility with standard industrial mounting techniques.

Single Bipolar Transistors Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided documentation. Verify pinout compatibility and electrical specifications before considering alternative manufacturers' equivalents.

2SC3416E2SC3416E
$0.20
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