2SC3467E

Single Bipolar Transistors Overview

The onsemi 2SC3467E is a single NPN silicon bipolar junction transistor designed for general-purpose amplification and switching applications. It features a collector-emitter breakdown voltage of 200 V and a maximum continuous collector current of 100 mA. The device offers a transition frequency of 150 MHz and supports a maximum power dissipation of 1 W. It is housed in a TO-226-3 (TO-92-3 long body) through-hole package with three leads. The component operates at junction temperatures up to 150°C and meets RoHS 3 compliance standards.

Single Bipolar Transistors Feature Summary

• High voltage capability with a 200 V collector-emitter breakdown rating suitable for demanding circuit environments.
• Moderate speed performance characterized by a 150 MHz transition frequency for signal processing tasks.
• Robust thermal handling with a 1 W power dissipation limit and a 150°C maximum junction temperature.
• Standardized through-hole mounting configuration compatible with legacy and modern PCB layouts.

Single Bipolar Transistors Applications

• General-purpose low-power amplification circuits
• Electronic switching applications requiring high voltage isolation
• Signal processing stages in consumer electronics

Single Bipolar Transistors Procurement Notes

Verify the specific manufacturer source, as the part number appears associated with both onsemi and Sanyo Semiconductor in public databases. Confirm the exact physical dimensions of the TO-92 long body variant against your board layout requirements. Ensure the RoHS 3 status aligns with your environmental compliance mandates. Cross-reference the datasheet revision date to guarantee parameter accuracy for critical design specifications.

Single Bipolar Transistors Selection Notes

Select this component when a high-voltage NPN transistor is required in a standard through-hole package. The 200 V rating distinguishes it from lower-voltage alternatives like the 2SC4617G. Consider the 150 MHz bandwidth for audio or intermediate frequency applications. Evaluate the 1 W power dissipation against your thermal management strategy. Compare the DC current gain specifications with your biasing requirements to ensure adequate drive capability.

Single Bipolar Transistors Part Context

The 2SC3467E belongs to the family of small-signal bipolar transistors used in discrete semiconductor designs. It serves as a replacement for older Japanese industrial standards often designated by the 2SC prefix. The device complements PNP counterparts in push-pull amplifier configurations. Its long-body TO-92 package provides improved heat dissipation compared to standard variants, supporting higher power operations within the same footprint constraints.

Single Bipolar Transistors Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided documentation. Verify compatibility with direct replacements such as generic 2SC3467 equivalents only after confirming pinout and electrical parameter alignment with the original specification sheet.