2SC3495-AA

Single Bipolar Transistors Overview

The onsemi 2SC3495-AA is a single NPN silicon bipolar junction transistor designed for small-signal applications. It features a collector-emitter breakdown voltage of 100V and a maximum continuous collector current of 50mA. The device supports a power dissipation of 500mW and operates with a transition frequency of 250MHz. Packaged in a TO-92 (TO-226AA) through-hole configuration, it utilizes FBET process technology to achieve high DC current gain ranging from 500 to 2000.

Single Bipolar Transistors Feature Summary

• High DC current gain capability
• Low collector-to-emitter saturation voltage
• FBET process technology adoption

Single Bipolar Transistors Applications

• Radio frequency amplifier circuits
• Precision current sources
• Low-frequency general-purpose amplification

Single Bipolar Transistors Procurement Notes

Verify the specific manufacturer source, as components are distributed by onsemi, Sanyo, and Rochester Electronics. Confirm that the received unit matches the 2SC3495-AA designation and TO-92 package style. Ensure documentation aligns with the original manufacturer specifications for electrical characteristics and absolute maximum ratings before integration into designs.

Single Bipolar Transistors Selection Notes

Select this component when high current gain and low saturation voltage are required for signal amplification. The 100V breakdown rating suits moderate voltage applications. Consider the TO-92 package constraints for thermal management and board space. Verify compatibility with the intended circuit's frequency range given the 250MHz transition frequency specification.

Single Bipolar Transistors Part Context

This part belongs to the family of small-signal NPN transistors manufactured using FBET process technology. It serves as a general-purpose amplifier alternative to standard low-power BJTs. The 2SC3495 series is widely recognized for its high hFE performance, making it suitable for sensitive analog signal processing tasks where gain stability is critical.

Single Bipolar Transistors Replacement Considerations

Direct substitutes include other NPN transistors with similar 100V Vceo, 50mA Ic, and TO-92 packaging. Verify pinout compatibility and thermal resistance parameters. Cross-reference datasheets for matching hFE ranges and transition frequencies to ensure functional equivalence in existing circuit designs.