2SC3503CSTU

Single Bipolar Transistors Overview

The onsemi 2SC3503CSTU is an NPN epitaxial silicon transistor housed in a TO-126 package. It features a collector-emitter breakdown voltage of 300V and a continuous collector current rating of 100mA. The device offers a DC current gain (hFE) range of 40 to 80 for the C grade, with a transition frequency of 150MHz. Total power dissipation reaches 7W at 25°C case temperature. Key electrical characteristics include a reverse transfer capacitance of 1.8pF and a collector-emitter saturation voltage of 0.6V.

Single Bipolar Transistors Feature Summary

• High voltage capability with a 300V collector-emitter breakdown rating
• Low reverse transfer capacitance designed to minimize distortion
• Excellent gain linearity optimized for low total harmonic distortion applications
• Complementary pairing available with the 2SA1381/KSA1381 PNP transistor

Single Bipolar Transistors Applications

• Audio amplification circuits
• Voltage amplifier stages
• Current source implementations
• CRT display and video output drivers
• General purpose amplification tasks

Single Bipolar Transistors Procurement Notes

Verify the specific hFE bin classification required for your design, as the 'C' suffix denotes a gain range of 40 to 80. Confirm that the TO-126 through-hole package aligns with your PCB footprint requirements. Ensure thermal management strategies account for the 7W dissipation limit when operating at elevated case temperatures. Cross-reference the datasheet revision to confirm all electrical parameters match your system specifications before finalizing procurement.

Single Bipolar Transistors Selection Notes

Select this component when high voltage isolation and low distortion are critical priorities. The C-grade hFE range suits applications requiring moderate gain consistency without tight binning costs. Consider the complementary KSA1381 for push-pull configurations. Evaluate thermal resistance constraints if mounting directly to heatsinks. This transistor is suitable for linear operation where gain linearity impacts signal fidelity more than raw switching speed.

Single Bipolar Transistors Part Context

This part belongs to the 2SC3503/KSC3503 family of NPN epitaxial silicon transistors originally developed by Fairchild Semiconductor. The series is engineered for high-voltage linear applications, specifically targeting audio and video output stages. The TO-126 package provides robust mechanical stability for through-hole mounting. The family includes various hFE grades to accommodate different circuit gain requirements while maintaining consistent electrical performance across the product line.

Single Bipolar Transistors Replacement Considerations

The official complement is the 2SA1381 or KSA1381 PNP transistor. Verify pinout compatibility and thermal characteristics when substituting. Check hFE matching requirements if used in differential pairs. Ensure replacement parts meet the same 300V breakdown and 100mA current ratings.