2SC3583-A

Overview

The CEL 2SC3583-A is an NPN epitaxial silicon transistor belonging to the NE681 series, designed for low noise and high gain amplifier applications. Registered under EIAJ1 standard as part number 2SC3583, it utilizes Package Outline 33 (SOT-23 style). Key electrical characteristics include a gain bandwidth product of 9.0 GHz at VCE = 8 V and IC = 20 mA. The device exhibits a typical noise figure of 1.4 dB at 1 GHz and 1.8 dB at 2 GHz when biased at VCE = 8 V and IC = 7 mA. Associated gain reaches 13.5 dB at 1 GHz under the same bias conditions. Forward current gain ranges from 50 to 250 at VCE = 8 V and IC = 20 mA.

Feature Summary

• Optimized for simultaneous low noise and high gain performance using a single matching point.
• Suitable for amplifier applications operating up to 4 GHz frequency range.
• Utilizes NPN epitaxial silicon construction for reliable high-frequency operation.

Applications

• Low noise amplifier circuits
• High gain RF amplifier stages
• Microwave communication systems

Procurement Notes

Verify the specific package outline and suffix against official documentation before procurement. Confirm that the component meets all absolute maximum ratings regarding collector voltage and power dissipation for the intended thermal environment. Ensure compatibility with the required biasing conditions for optimal noise figure and gain performance.

Selection Notes

Select this component for designs requiring high gain bandwidth and low noise figures in the microwave spectrum. Consider the SOT-23 style package for surface mount assembly constraints. Evaluate thermal resistance and total power dissipation limits relative to the expected ambient temperature and heat sinking capabilities during operation.

Part Context

The 2SC3583-A corresponds to the NE68133 variant within the NEC/CEL NE681 series. This series includes multiple package options such as chip, Micro-X, and various plastic surface mount styles like SOT-343 and SOT-143. The 2SC3583 designation specifically identifies the SOT-23 style packaged version of this high-frequency transistor technology.

Replacement Considerations

Direct substitutes within the NE681 series include NE68100, NE68118, NE68119, NE68130, NE68135, NE68139, and NE68139R. Alternative registered numbers include 2SC3604 and 2SC4094. Verify pinout and package dimensions match the target footprint before substitution.

FAQ

What is the maximum gain bandwidth product specified for the 2SC3583-A?

The gain bandwidth product is specified as 9.0 GHz when measured at VCE = 8 V and IC = 20 mA.

What is the typical noise figure at 2 GHz for this device?

At a frequency of 2 GHz, with VCE = 8 V and IC = 7 mA, the typical noise figure is 1.8 dB.

Which package style does the 2SC3583-A utilize?

The 2SC3583-A uses Package Outline 33, which is described as an SOT-23 style package.