2SC3646S-P-TD-E

Single Bipolar Transistors Overview

The 2SC3646S-P-TD-E is a single NPN silicon bipolar junction transistor manufactured by onsemi. It is designed for surface mount applications using the PCP-3 package. The device supports a maximum collector current of 1 A and withstands a collector-emitter voltage of 100 V, with a collector-base voltage rating of 120 V. Key electrical characteristics include a transition frequency of 120 MHz and a DC current gain (hFE) ranging from 100 to 400. Power dissipation is rated at 500 mW, and the component operates within a temperature range up to +150°C.

Single Bipolar Transistors Feature Summary

• High-speed switching capability enabled by a 120 MHz transition frequency
• Robust voltage handling with 100 V collector-emitter breakdown
• Low saturation voltage for efficient power management
• Compact surface-mount packaging for automated assembly

Single Bipolar Transistors Applications

• General-purpose switching circuits
• Amplifier stages in consumer electronics
• Driver circuits for low-power loads

Single Bipolar Transistors Procurement Notes

Verify the exact suffix against official onsemi documentation to confirm specific binning or tape-and-reel specifications. Ensure the requested part number matches the precise package variant required for your PCB footprint. Cross-reference datasheet revisions to confirm compliance with current environmental standards such as RoHS and REACH before finalizing procurement orders.

Single Bipolar Transistors Selection Notes

Select this component when a compact NPN transistor with moderate current handling and high-speed performance is required. The PCP package offers a balance between thermal dissipation and board space efficiency. Consider the 100 V rating for general low-voltage logic interfacing and ensure the 500 mW power limit aligns with the thermal design of the target application environment.

Single Bipolar Transistors Part Context

This component belongs to the 2SC3646 series of small-signal bipolar transistors. The series is characterized by its suitability for general-purpose amplification and switching tasks. The specific model utilizes silicon technology and is optimized for surface-mount integration, providing reliability for mass-produced electronic devices requiring consistent electrical performance across varying operating temperatures.

Single Bipolar Transistors Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided source data.