2SC3648S-TD-E

Single Bipolar Transistors Overview

The onsemi 2SC3648S-TD-E is a single NPN bipolar junction transistor housed in a PCP surface-mount package. It features a collector-to-emitter voltage rating of 160 V and a continuous collector current capacity of 0.7 A, with a peak pulse current of 1.5 A. The device exhibits a low collector-to-emitter saturation voltage and a gain-bandwidth product of 120 MHz. Thermal management allows for a maximum power dissipation of 500 mW at ambient temperature, increasing to 1.3 W when mounted on a ceramic substrate.

Single Bipolar Transistors Feature Summary

• Utilizes FBET and MBIT processes to achieve high breakdown voltage and large current capacity.
• Designed for fast switching speed suitable for high-frequency applications.
• Ultrasmall physical size facilitates high-density integration within small-sized hybrid ICs.

Single Bipolar Transistors Applications

• Color TV audio output stages
• Inverter circuits

Single Bipolar Transistors Procurement Notes

Verify the specific ordering suffix against official documentation to confirm the exact packing type and quantity. Confirm RoHS compliance status through the manufacturer's material declaration. Ensure the selected variant matches the required hFE rank for the intended circuit design. Cross-reference the datasheet revision date to validate parameter accuracy.

Single Bipolar Transistors Selection Notes

Select this component for designs requiring high-voltage handling and rapid switching characteristics in a compact footprint. Evaluate thermal requirements carefully, as power dissipation capabilities depend significantly on the PCB mounting conditions. Verify that the operating current remains within the specified continuous and pulse limits to ensure long-term reliability.

Single Bipolar Transistors Part Context

This device belongs to the 2SA1418/2SC3648 family of bipolar transistors manufactured by onsemi. It is part of a series designed for color television audio outputs and inverters. The component utilizes advanced semiconductor processes to deliver performance in an ultrasmall package suitable for modern electronic assemblies.

Single Bipolar Transistors Replacement Considerations

Consult official distributor databases for verified substitute part numbers. Ensure any replacement maintains equivalent voltage ratings, current capacities, and package dimensions. Validate electrical characteristics against the original specifications before implementation.

Single Bipolar Transistors FAQ

What is the maximum collector-to-emitter voltage for the 2SC3648S-TD-E?

The maximum collector-to-emitter voltage (VCEO) is rated at 160 V.

How does mounting affect the power dissipation capability?

Power dissipation is rated at 500 mW at ambient temperature, but increases to 1.3 W when mounted on a ceramic substrate measuring 250mm² x 0.8mm.

What is the typical DC current gain range?

The DC current gain (hFE) is classified into ranks based on measurement at 100mA: Rank R is 100-200, Rank S is 140-280, and Rank T is 200-400.