2SC3648T-TD-E

Single Bipolar Transistors Overview

The onsemi 2SC3648T-TD-E is a single NPN bipolar junction transistor housed in a PCP (SOT-89) surface-mount package. It features a collector-to-emitter voltage rating of 160 V and a continuous collector current capacity of 0.7 A, with a peak pulse current of 1.5 A. The device utilizes FBET and MBIT processes to achieve fast switching speeds and low saturation voltages. Key electrical parameters include a gain-bandwidth product of 120 MHz at 50 mA, a maximum DC current gain of 400, and a power dissipation of 500 mW at ambient temperature, extending to 1.3 W when mounted on a ceramic substrate.

Single Bipolar Transistors Feature Summary

• High breakdown voltage combined with large current capacity for robust operation
• Fast switching speed enabled by FBET and MBIT process technologies
• Ultrasmall physical size facilitating high-density hybrid IC integration

Single Bipolar Transistors Applications

• Color TV audio output stages
• Inverter circuits

Single Bipolar Transistors Procurement Notes

Verify the specific ordering suffix 'TD' against the manufacturer's EN1788C documentation to confirm reel packing quantities and lead times. Ensure the component meets RoHS compliance requirements for the target assembly environment. Cross-reference the JEITA SC-62 or JEDEC SOT-89 footprint dimensions during PCB layout validation to guarantee mechanical compatibility with the intended design.

Single Bipolar Transistors Selection Notes

Select this component for applications requiring high-voltage handling up to 160 V in a compact surface-mount form factor. The PCP package offers thermal advantages over standard SOT-89 variants when mounted on ceramic substrates. Evaluate the hFE ranking requirements, as the device is classified into specific gain bands (R, S, T) based on performance at 100 mA collector current.

Single Bipolar Transistors Part Context

This part belongs to the 2SC3648 series, which shares specifications with the complementary PNP 2SA1418 transistor. Both devices are designed for similar high-voltage, medium-current applications within the same package family. The series emphasizes low saturation voltage characteristics to improve efficiency in switching and amplification roles.

Single Bipolar Transistors Replacement Considerations

The 2SA1418 serves as the complementary PNP counterpart within the same datasheet specification sheet.

Single Bipolar Transistors FAQ

What is the maximum collector-to-base voltage for the 2SC3648?

The absolute maximum collector-to-base voltage rating is 180 V.

How does mounting affect the power dissipation rating?

Power dissipation increases from 500 mW at ambient temperature to 1.3 W when mounted on a ceramic substrate measuring 250 mm² x 0.8 mm.

What are the hFE gain rankings available for this device?

The device is classified into three ranks based on hFE measured at 100 mA: Rank R (100-200), Rank S (140-280), and Rank T (200-400).