2SC3649S-TD-E

Single Bipolar Transistors Overview

The onsemi 2SC3649S-TD-E is an NPN single bipolar junction transistor housed in a PCP surface-mount package. It features a collector-to-emitter voltage of 160 V and a continuous collector current capacity of 1.5 A, with a peak pulse current rating of 2.5 A. The device utilizes FBET and MBIT processes to achieve low saturation voltages and high breakdown capabilities. Key electrical specifications include a gain-bandwidth product of 120 MHz at 50 mA, a maximum DC current gain (hFE) of 400, and a collector cutoff current of 1 μA. Thermal performance supports a junction temperature up to 150 °C.

Single Bipolar Transistors Feature Summary

• Adopts FBET and MBIT manufacturing processes for enhanced performance
• Provides high breakdown voltage combined with large current handling capacity
• Features ultrasmall physical dimensions suitable for high-density hybrid IC designs

Single Bipolar Transistors Applications

• High-density small-sized hybrid integrated circuits
• General-purpose switching applications requiring high voltage isolation
• Amplifier stages utilizing the specified gain-bandwidth characteristics

Single Bipolar Transistors Procurement Notes

Verify the specific ordering suffix against official documentation to confirm packaging and environmental compliance. The 'S' suffix indicates tape-and-reel shipping with a minimum packing quantity of 1,000 pieces per reel. Confirm that the component meets Pb-Free requirements if applicable to your assembly process. Cross-reference the exact part number with the manufacturer's current datasheet to ensure availability of the latest revision and accurate mechanical drawings.

Single Bipolar Transistors Selection Notes

Select this component when circuit design requires an NPN transistor capable of withstanding 160 V collector-to-emitter stress while managing currents up to 1.5 A continuously. The PCP package offers a compact footprint ideal for space-constrained layouts. Ensure the application operates within the recommended thermal limits to maintain the specified hFE and switching time parameters. Consider the 120 MHz gain-bandwidth product for frequency-dependent signal processing needs.

Single Bipolar Transistors Part Context

This device belongs to the 2SC3649 series manufactured by onsemi, designed as a complementary pair to the 2SA1419 PNP transistor. Both devices share similar structural advantages derived from FBET and MBIT technologies. The series targets applications demanding robust performance in a miniature form factor. The PCP package aligns with standard JEITA and JEDEC classifications such as SC-62 and SOT-89.

Single Bipolar Transistors Replacement Considerations

The 2SC3649T-TD-E serves as a direct functional substitute within the same family, differing primarily in shipping configuration rather than electrical characteristics. Verify pinout compatibility and package dimensions before substitution. No other cross-manufacturer equivalents are confirmed in the provided source material.