2SC3649T-TD-H

Single Bipolar Transistors Overview

The onsemi 2SC3649T-TD-H is a discontinued NPN epitaxial planar silicon transistor designed for general-purpose amplification and switching applications. It features a PCP (TO-243AA) surface-mount package with a maximum collector-emitter voltage of 160 V and a continuous collector current of 1.5 A. The device offers a transition frequency of 120 MHz and a maximum power dissipation of 500 mW at 25°C ambient temperature. Key electrical characteristics include a minimum DC current gain (hFE) of 200 at Ic=100mA, Vce=5V, and a typical saturation voltage of 450mV at Ib=50mA, Ic=500mA. The component supports a junction temperature up to 150°C and complies with RoHS3 standards.

Single Bipolar Transistors Feature Summary

• High breakdown voltage capability suitable for medium-voltage switching circuits
• Low saturation voltage for efficient power handling in amplifier stages
• Surface-mount PCP package optimized for automated assembly processes

Single Bipolar Transistors Applications

• General-purpose low-frequency amplification
• Medium-voltage switching circuits
• Audio output stages requiring high voltage tolerance

Single Bipolar Transistors Procurement Notes

This part number is officially obsolete and no longer manufactured by onsemi. Verification of availability should focus exclusively on surplus or secondary market distributors rather than direct manufacturer channels. Buyers must confirm the authenticity and storage history of existing stock due to the component's end-of-life status. Cross-referencing with the specified replacement part is recommended for new designs.

Single Bipolar Transistors Selection Notes

Designers should evaluate the 2SC3649T-TD-E as a potential functional substitute, noting that it shares the same base product family and electrical specifications. Selection criteria must prioritize the 160V collector-emitter rating and 1.5A current capacity to ensure compatibility with original circuit requirements. Thermal management remains critical given the 500mW power dissipation limit in the PCP package.

Single Bipolar Transistors Part Context

The 2SC3649 series belongs to onsemi's lineup of bipolar junction transistors utilizing epitaxial planar technology. This specific variant is the NPN counterpart to the 2SA1419 PNP transistor, often used in complementary pairs. The PCP package provides a robust thermal path while maintaining a compact footprint suitable for modern printed circuit board layouts.

Single Bipolar Transistors Replacement Considerations

The 2SC3649T-TD-E is documented as an available alternative from onsemi. Both parts share identical electrical ratings and pin configurations within the PCP package family.