2SC3661-TB-E

Single Bipolar Transistors Overview

The 2SC3661-TB-E is an NPN bipolar junction transistor manufactured by Sanyo. It features a collector-emitter voltage rating of 25 V and a DC collector current capacity of 300 mA. The device exhibits a typical gain-bandwidth product (ft) of 250 MHz and a high DC current gain (hFE) of up to 1500. Designed for surface-mount applications, it utilizes a TO-236-3 package with a maximum power dissipation of 200 mW. This component is engineered for high-gain amplifier functions in low-frequency general-purpose circuits.

Single Bipolar Transistors Feature Summary

• High DC current gain capability suitable for sensitive signal amplification
• Compact surface-mount package design facilitating miniaturization
• Optimized performance for low-frequency general-purpose amplifier applications

Single Bipolar Transistors Applications

• Low-frequency general-purpose amplifier circuits
• Muting circuit implementations
• Miniaturized electronic set designs requiring small-sized components

Single Bipolar Transistors Procurement Notes

Verify the manufacturer origin as Sanyo Denki Co., Ltd. when sourcing this component. Confirm the specific ordering suffix matches the required specifications. Ensure compliance with RoHS standards if environmental regulations apply to your project. Cross-reference the part number against official distributor catalogs to validate authenticity and availability status before finalizing procurement decisions.

Single Bipolar Transistors Selection Notes

Select this transistor for applications requiring high current gain in compact form factors. The 25 V voltage rating limits suitability to low-voltage circuits. Consider the 200 mW power dissipation constraint during thermal management planning. The TO-236-3 package requires appropriate PCB footprint design. Evaluate the 250 MHz bandwidth against signal frequency requirements to ensure adequate performance margins.

Single Bipolar Transistors Part Context

This component belongs to the single bipolar transistor category within Sanyo's semiconductor portfolio. It serves as a specialized solution for high-gain amplification tasks where physical size constraints are critical. The device complements other small-signal transistors designed for consumer electronics and portable devices requiring efficient space utilization.

Single Bipolar Transistors Replacement Considerations

Consult official substitution lists for compatible alternatives. Verify pinout compatibility and electrical parameter equivalence before replacing. Ensure the substitute component meets the same voltage, current, and package requirements.