2SC3665-Y(T2NSW,FM

Single Bipolar Transistors Overview

The Toshiba 2SC3665 is an NPN silicon epitaxial planar transistor manufactured using the PCT process. It features a collector-emitter voltage of 120 V and a maximum collector current of 800 mA. The device provides a DC current gain (hFE) ranging from 120 to 240 for the Y classification, with a transition frequency of 120 MHz. It operates within a junction temperature range of -55°C to 150°C and is housed in a TO-92 package.

Single Bipolar Transistors Feature Summary

• Designed specifically for audio power amplifier applications
• Functions effectively as a driver-stage amplifier
• Complementary pairing available with the 2SA1425 PNP transistor

Single Bipolar Transistors Applications

• Audio Power Amplifier Applications
• Driver-Stage Amplifier Applications

Single Bipolar Transistors Procurement Notes

Verify the specific ordering suffix to confirm the hFE binning classification, as the 'Y' designation indicates a gain range of 120 to 240. Confirm RoHS compatibility status directly with the manufacturer or authorized distributor, as environmental compliance varies by production lot and requires explicit verification before integration into regulated equipment designs.

Single Bipolar Transistors Selection Notes

Select this component when designing circuits requiring high-voltage handling up to 120 V combined with moderate current capabilities of 800 mA. The 120 MHz transition frequency supports audio band operations. Ensure the design accommodates the complementary 2SA1425 if utilizing push-pull configurations, maintaining thermal management within the specified 150°C junction limit.

Single Bipolar Transistors Part Context

This component belongs to Toshiba's discrete bipolar transistor portfolio, engineered for general-purpose amplification tasks. It utilizes the PCT process technology to achieve stable performance characteristics suitable for consumer electronics and industrial control systems where reliable signal amplification is required.

Single Bipolar Transistors Replacement Considerations

The datasheet explicitly identifies the 2SA1425 as the complementary PNP counterpart. Direct substitution with other transistors requires matching voltage ratings, current limits, and gain classifications to ensure circuit stability.