Single Bipolar Transistors 2SC3668-Y,F2PANF(J product image

2SC3668-Y,F2PANF(J

  • Description:TRANS NPN 50V 2A MSTM
  • Series:-

SKU:244e96b2f50c Category: Brand:

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2SC3668-Y,F2PANF(J is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists Toshiba Semiconductor and Storage. Its product description is TRANS NPN 50V 2A MSTM. Review the specifications below when checking this part for your BOM.

Single Bipolar Transistors specifications for 2SC3668-Y,F2PANF(J

  • Description:TRANS NPN 50V 2A MSTM
  • Series:-
  • Mfr:Toshiba Semiconductor and Storage
  • Package:Bulk
  • Transistor Type:NPN
  • Current - Collector (Ic) (Max):2:00 AM
  • Voltage - Collector Emitter Breakdown (Max):50 V
  • Vce Saturation (Max) @ Ib, Ic:500mV @ 50mA, 1A
  • Current - Collector Cutoff (Max):1µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce:70 @ 500mA, 2V
  • Power - Max:1 W
  • Frequency - Transition:100MHz
  • Operating Temperature:150°C (TJ)
  • Mounting Type:Through Hole
  • Package / Case:SC-71
  • Supplier Device Package:MSTM
  • Grade:-
  • Qualification:-

Single Bipolar Transistors datasheet and documents for 2SC3668-Y,F2PANF(J

2SC3668-Y,F2PANF(J

Single Bipolar Transistors Overview

The Toshiba 2SC3668 is a silicon NPN epitaxial planar transistor designed for power amplifier and switching applications. It features a maximum collector current of 2 A, collector-emitter voltage of 50 V, and collector power dissipation of 1000 mW at 25°C. The device exhibits low saturation voltage (VCE(sat) max 0.5 V at IC = 1 A) and high-speed switching characteristics with a typical storage time of 1.0 μs. DC current gain ranges from 70 to 240 depending on the classification code.

Single Bipolar Transistors Feature Summary

  • Low saturation voltage for efficient power handling
  • High-speed switching capability suitable for rapid transitions
  • Complementary pairing available with the 2SA1428 PNP transistor

Single Bipolar Transistors Applications

  • Power amplifier circuits
  • General-purpose power switching applications

Single Bipolar Transistors Procurement Notes

Verify the specific ordering suffix against official Toshiba Semiconductor and Storage documentation to confirm environmental compliance status, such as RoHS compatibility, and binning classifications like 'Y' or 'O'. Confirm package type and marking details directly from the manufacturer's datasheet before procurement.

Single Bipolar Transistors Selection Notes

Select this component for designs requiring robust NPN switching with moderate voltage ratings up to 50 V and currents up to 2 A. Ensure thermal management supports the 1000 mW dissipation rating. Verify that the required hFE bin matches the application's drive requirements, noting the distinction between O and Y classifications.

Single Bipolar Transistors Part Context

This part belongs to the Toshiba 2SC3668 series of general-purpose NPN transistors manufactured using the PCT process. It serves as a complementary pair to the 2SA1428, facilitating push-pull configurations in audio and RF power stages within consumer electronics and industrial equipment.

Single Bipolar Transistors Replacement Considerations

The 2SA1428 is the documented complementary PNP counterpart. No other direct substitutes are listed in the provided documentation.

2SC3668-Y,F2PANF(J2SC3668-Y,F2PANF(J

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