2SC3668-Y,T2F(J

Single Bipolar Transistors Overview

The Toshiba 2SC3668-Y,T2F(J) is a silicon NPN epitaxial planar transistor utilizing the PCT process. It features a collector-emitter voltage of 50 V and a maximum collector current of 2 A. The device supports a collector power dissipation of 1000 mW at 25°C ambient temperature. Electrical characteristics include a typical transition frequency of 100 MHz and a storage time of 1.0 μs. The saturation voltage is limited to 0.5 V max at 1 A collector current. The component is housed in a JEDEC TO-92MOD (2-7D101A) package.

Single Bipolar Transistors Feature Summary

• Designed for high-speed switching applications with low saturation voltage
• Complementary pairing available with the 2SA1428 PNP transistor
• Capable of handling high collector power dissipation up to 1000 mW

Single Bipolar Transistors Applications

• Power amplifier circuits
• General-purpose power switching applications

Single Bipolar Transistors Procurement Notes

Verify the specific ordering suffixes against official Toshiba Semiconductor and Storage documentation to confirm environmental compliance status, such as RoHS compatibility. Confirm that the requested part number matches the exact electrical binning requirements, particularly regarding DC current gain classifications. Ensure all design parameters remain within the absolute maximum ratings defined in the manufacturer's datasheet to maintain product reliability.

Single Bipolar Transistors Selection Notes

Select this component when a robust NPN transistor with a 50 V collector-emitter rating and 2 A continuous current capability is required. The device is suitable for designs needing a low saturation voltage of 0.5 V or less under heavy load conditions. Consider the complementary 2SA1428 if a matched pair configuration is necessary for push-pull amplifier stages or synchronous switching topologies.

Single Bipolar Transistors Part Context

This component belongs to the Toshiba 2SC3668 series of general-purpose small signal transistors manufactured using the PCT process. It is designed primarily for use in consumer electronics, office equipment, and industrial control systems where reliable power amplification and fast switching are essential. The device is distinct from higher-voltage variants like the 2SC3669, which offers an 80 V rating.

Single Bipolar Transistors Replacement Considerations

The 2SA1428 is the officially documented complementary PNP transistor for this series. Verify pinout compatibility and thermal performance before substituting with other generic NPN transistors offering similar 50 V and 2 A ratings.

Single Bipolar Transistors FAQ

What is the maximum collector-emitter breakdown voltage?

The maximum collector-emitter breakdown voltage (V(BR)CEO) is 50 V.

Is this transistor compatible with the 2SA1428?

Yes, the datasheet explicitly states that the 2SC3668 is complementary to the 2SA1428.

What is the typical transition frequency?

The typical transition frequency (fT) is 100 MHz.