2SC3669-Y(T2OMI,FM

Single Bipolar Transistors Overview

The Toshiba 2SC3669-Y is an NPN silicon epitaxial transistor utilizing the PCT process, housed in a 2-7D101A package. It features a maximum collector-emitter voltage of 80 V and a continuous collector current rating of 2 A. The device offers a transition frequency of 100 MHz and a collector power dissipation of 1000 mW. The 'Y' suffix indicates a DC current gain (hFE) range of 120 to 240 at IC = 0.5 A. It is designed for high-speed switching with a typical storage time of 1.0 μs.

Single Bipolar Transistors Feature Summary

• Low collector saturation voltage of 0.5 V maximum at 1 A collector current
• High-speed switching capability with a typical storage time of 1.0 μs
• Complementary pairing available with the 2SA1429 PNP transistor

Single Bipolar Transistors Applications

• Power amplifier applications
• Power switching applications

Single Bipolar Transistors Procurement Notes

Verify the specific ordering suffix against official documentation to confirm the hFE classification and environmental compliance status. Confirm that the component meets the required RoHS compatibility standards for your application. Review the Toshiba Semiconductor Reliability Handbook for derating concepts and methods before finalizing design parameters.

Single Bipolar Transistors Selection Notes

Select this component when designing circuits requiring an NPN transistor with an 80 V breakdown voltage and 2 A current handling capacity. Ensure the thermal management strategy accommodates the 1000 mW power dissipation limit. Verify that the 120 to 240 hFE range aligns with the base drive requirements of the target circuit design.

Single Bipolar Transistors Part Context

This part belongs to the Toshiba 2SC3669 series of general-purpose small signal transistors manufactured using the PCT process. It serves as the NPN counterpart to the 2SA1429 PNP transistor, facilitating push-pull configurations in audio and switching circuits within the broader discrete semiconductor portfolio.

Single Bipolar Transistors Replacement Considerations

The datasheet explicitly identifies the 2SA1429 as the complementary device. No other direct substitute part numbers are documented in the provided source material.

Single Bipolar Transistors FAQ

What is the DC current gain range for the 2SC3669-Y?

The 'Y' suffix denotes a minimum DC current gain (hFE) of 120 and a maximum of 240, measured at a collector current of 0.5 A and VCE of 2 V.

What is the maximum collector-base voltage rating?

The absolute maximum rating for collector-base voltage (VCBO) is 80 V at an ambient temperature of 25°C.

Is this transistor suitable for high-frequency amplification?

Yes, it has a transition frequency (fT) of 100 MHz at IC = 0.5 A, making it suitable for high-frequency applications such as power amplifiers.