2SC3708T-AA

Single Bipolar Transistors Overview

The 2SC3708T-AA is a single NPN silicon bipolar junction transistor manufactured by onsemi. It features a collector-emitter voltage rating of 80 V and a continuous collector current capacity of 500 mA. The device operates with a transition frequency of 120 MHz and supports a maximum power dissipation of 600 mW. Designed for through-hole mounting, it utilizes a 3-NP package configuration, also identified as TO-92 or TO-226AA. The component is rated for a maximum junction temperature of 150°C, ensuring reliable performance in standard electronic circuit applications requiring small-signal amplification or switching.

Single Bipolar Transistors Feature Summary

• NPN silicon construction for small-signal amplification and switching
• Through-hole mounting capability via 3-NP leaded package
• High transition frequency supporting radio frequency applications

Single Bipolar Transistors Applications

• General-purpose small signal amplification circuits
• Radio frequency signal processing stages
• Electronic switching applications within voltage limits

Single Bipolar Transistors Procurement Notes

Verify the specific ordering suffix against official onsemi documentation to ensure exact electrical characteristics and packaging alignment. Confirm that the 3-NP package variant matches the intended PCB footprint requirements. Cross-reference the manufacturer part number with authorized distributor catalogs to validate authenticity and traceability before finalizing procurement orders.

Single Bipolar Transistors Selection Notes

Select this component when an NPN transistor with 80 V breakdown voltage and 500 mA current handling is required in a through-hole format. Ensure the application does not exceed the 600 mW power dissipation limit under operating conditions. Consider the 120 MHz transition frequency suitability for the target signal bandwidth during circuit design phase.

Single Bipolar Transistors Part Context

This component belongs to the family of small-signal bipolar transistors produced by onsemi. It serves as a discrete semiconductor device designed for general-purpose electronic circuits. The part is distinct from surface-mount variants and provides a traditional through-hole solution for legacy or specific mechanical design constraints in consumer and industrial electronics.

Single Bipolar Transistors Replacement Considerations

Consult official cross-reference data for direct substitutes. Verify pinout compatibility and electrical parameter equivalence before implementation.