2SC3731-T-A

Single Bipolar Transistors Overview

The 2SC3731-T-A is an RF small signal NPN silicon bipolar transistor manufactured by NEC Corporation. It features a maximum collector current of 0.2 A and a collector-emitter breakdown voltage of 15 V. The device has a maximum collector capacitance of 4 pF and utilizes a plastic in-line package with through-hole terminals.

Single Bipolar Transistors Feature Summary

• NPN silicon construction for RF applications
• High-speed switching capability
• Low collector capacitance design

Single Bipolar Transistors Applications

• RF amplification circuits
• High-frequency switching applications
• Signal processing stages

Single Bipolar Transistors Procurement Notes

Verify the manufacturer designation, as NEC's semiconductor division is now Renesas Technology. Confirm the specific suffix '-T-A' corresponds to the intended tape-and-reel packaging configuration. Ensure compliance with RoHS directives if lead-free terminations are required for modern assembly processes.

Single Bipolar Transistors Selection Notes

Select this component for low-power RF designs requiring an NPN configuration with moderate current handling. Compare the 15 V rating against circuit supply voltages to ensure adequate headroom. Verify that the through-hole package format aligns with the target PCB layout constraints.

Single Bipolar Transistors Part Context

This part belongs to the 2SC3732 series family, sharing similar electrical characteristics such as the 0.2 A collector current and 15 V breakdown voltage. The primary distinction lies in the packaging and ordering suffixes, where the -T-A variant specifies the specific reel packaging method used during distribution.