2SC3749M

Single Bipolar Transistors Overview

The 2SC3749M is an NPN epitaxial silicon power transistor manufactured by onsemi. It features a collector-emitter breakdown voltage of 500V and a continuous collector current rating of 3A. The device is designed for high-speed switching applications, offering fast switching speed and a wide area of safe operation (ASO). Packaged in a TO-220ML format, it supports through-hole mounting and is rated for 25W power dissipation with a transition frequency of 18MHz.

Single Bipolar Transistors Feature Summary

• High breakdown voltage capability for robust performance
• Fast switching speed suitable for high-frequency regulation
• Wide area of safe operation ensuring reliability under stress

Single Bipolar Transistors Applications

• Switching regulator circuits
• High-voltage power supply designs
• General-purpose power switching applications

Single Bipolar Transistors Procurement Notes

Verify the manufacturer marking matches onsemi specifications to ensure authenticity. Confirm the package type corresponds to TO-220ML Full Pack requirements. Check datasheet revisions for any updates to electrical characteristics or thermal parameters before integration into final designs.

Single Bipolar Transistors Selection Notes

Select this component when a 500V NPN transistor with 3A current capacity is required. Ensure the application demands fast switching speeds and benefits from a wide ASO. Verify thermal management solutions align with the 25W power dissipation rating in the chosen enclosure.

Single Bipolar Transistors Part Context

This part belongs to the family of NPN bipolar junction transistors optimized for power switching. It serves as a discrete semiconductor solution for converting and regulating electrical power in industrial and consumer electronics systems requiring high voltage isolation and reliable switching performance.

Single Bipolar Transistors Replacement Considerations

Public confirmed substitute part numbers include MJF18004. Cross-reference electrical parameters such as V(BR)CEO and Ic ratings to ensure compatibility with existing circuit designs.